Papers - KOBAYASHI Yasuyuki
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Layered boron nitride as a release layer for mechanical transfer of GaN-based Devices
Yasuyuki Kobayahi, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto
Nature 484 223 - 227 2012.4
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Photovoltaic and mechanical properties of boron carbide films prepared by magnetron sputtering
Tatsuya Nishida, Masayoshi Sato, Yoshiharu Enta, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa
Japanese Journal of Applied Physics 63 01SP3B 2024.1
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Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa
Diamond & Related Materials 123 108878-01 - 108878-12 2022.1
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Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated nitrogen-doped diamond-like carbon films
Hiroya Osanai, Kazuki Nakamura, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu, Hideki Nakazawa
745 139100-1 - 139100-15 2022.1
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Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu
Diamond & Related Materials 122 108809 2022.1
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Influence of the terrace width of pentacene underlayers on the crystallinity of C60 overlayers
Keiichi Nakata, Hideki Nakazawa, Hiroshi Okamoto, Yasuyuki Kobayashi
Thin Solid Films 692 137638-1 - 137638-5 2019.10
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Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto
Applied Physics Letters 2014.11
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Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganice Vapor Phase Epitaxy
Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu, Hideki Yamamoto
Applied Physics Express 6 105501-1 - 105501-4 2013.9
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A vertical InGaN/GaN light-emitting diode fabricated on a flexible substrate by a mechanical transfer method using BN
Toshiki Makimoto, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto
Applied Physics Express 5 072102-1 - 072102-3 2012.6
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Extremely narrow violet photoluminescnece line from ultrathin InN single quantum well on step-free GaN surface
Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hideki Yamamoto
Advanced Materials 24 4296 - 4300 2012.6