Updated on 2022/03/30

写真a

 
ENTA YOSHIHARU
 
Affiliation
Shizen Kagakukei(It is currently under consideration) Materials Science and Technology Section
Full-time staff
Graduate School of Science and Technology Research Division

Degree

  • 理学博士

  • 理学修士

Professional Memberships

  • 応用物理学会

  • 日本放射光学会

  • 日本物理学会

Papers

  • Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen

    Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu

    122   108809-1 - 108809-12   2022.1

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  • Annealing-induced void formation in SiO2 layers on Si substrates: Influence of surface orientation and hydrocarbon exposure

    Yoshiharu Enta, Yusuke Masuda, Kyota Akimoto

    719   122029-1 - 122029-7   2022.1

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  • Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition

    Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa

    123   108878-1 - 108878-12   2022.1

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  • Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated, nitrogen-doped diamond-like carbon films

    Hiroya Osanai, Kazuki Nakamura, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu, Hideki Nakazawa

    745   139100-1 - 139100-15   2022.1

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  • Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition

    K. Nakamura, H. Ohashi, Y. Enta, Y. Kobayashi, Y. Suzuki, M. Suemitsu, H. Nakazawa

    736   138923-1 - 138923-11   2021.10

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  • 窒素を添加したDLC膜特性へのアニール効果

    長内公哉,中村和樹,郡山春人,小林康之,遠田義晴,鈴木裕史,末光眞希,中澤日出樹

    電子情報通信学会技術研究報告   119 ( 271 )   9 - 14   2019.10

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  • Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon

    Syunki Narita, Yuki Nara, Yoshiharu Enta, Hideki Nakazawa

    Japanese Journal of Applied Physics   58   SIIA16-1 - SIIA16-8   2019.8

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  • Thermal stability of silicon and nitrogen doped DLC thin films

    IEICE Technical Report   118 ( 276 )   99 - 104   2018.10

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  • Si基板上SiO2薄膜の電子線照射による還元反応

    藤森敬典,千田陽介,増田悠右,氏家夏樹,遠田義晴

    電子情報通信学会技術研究報告   118 ( 179 )   47 - 52   2018.8

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  • Zr系金属ガラス表面の元素組成と化学結合状態

    郡山春人,藤森敬典,遠田義晴,富樫 望

    電子情報通信学会技術研究報告   118 ( 179 )   53 - 56   2018.8

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  • SiC/AlN/Si(110)基板上グラフェンの成長

    中澤日出樹,成田舜基,奈良友奎,遠田義晴

    電子情報通信学会技術研究報告   118 ( 179 )   7 - 12   2018.8

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  • Si添加DLC薄膜への窒素添加の効果

    中村和樹,大橋遼,横山大,田島圭一郎,遠藤則史,末光真希,遠田義晴,小林康之,鈴木裕史,中澤日出樹

    電子情報通信学会技術研究報告   118 ( 179 )   1 - 6   2018.8

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  • 室温電子線照射によるSiO2膜/Si基板界面でのSi微細構造形成

    遠田 義晴,増田 悠右,千田 陽介

    第65回応用物理学会春季学術講演会予稿集   2018.3

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  • 希釈ガスに水素ガスを用いたプラズマ化学気相成長法によるSi/N共添加 DLC 薄膜の作製と評価

    中村 和樹,大橋 遼, 横山 大, 田島 圭一郎, 遠藤 則史, 末光 眞希, 遠田 義晴, 小林 康之, 中澤 日出樹

    応用物理学会第72回東北支部学術講演会予稿集   2017.11

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  • Effects of Temperature and Pressure in Oxynitridation Kinetics on Si(100) with N2O Gas

    Yoshiharu Enta, Makoto Wada, Mariko Arita, Takahiro Takami

    Materials Science in Semiconductor Processing   70   63 - 67   2017.11

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  • Effects of nitrogen doping on the chemical bonding states and properties of silicon-doped diamond-like carbon films

    Kazuki Nakamura, Haruka Ohashi, Tai Yokoyama, Kei-ichiro Tajima, Norifumi Endo, Maki Suemitsu, Yoshiharu Enta, Yasuyuki Kobayashi, Hideki Nakazawa

    The 8th International Symposium on Surface Science   2017.10

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  • Effects of Organic-Compounds Doses on Silicon Fine Structures Formed in Voids on Silicon Dioxide Layers by Annealing in Vacuum

    Yoshiharu Enta, Takayuki Nagai, Kano Ogawa, Taichi Yoshida, Shodai Osanai, Takahito Ogasawara, Yoshisumi Tsuchimoto, Chikashi Maita, Natsuki Ujiie, Hideki Nakazawa

    The 8th International Symposium on Surface Science   2017.10

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  • Electron Beam Irradiation Effects on SiO2 Layer on Silicon Substrate at Room Temperature

    Yusuke Masuda, Yoshiharu Enta

    The 8th International Symposium on Surface Science   2017.10

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  • 水素原子を用いた3C-SiC/Si基板上へのグラフェンの低温形成

    荒畑宏樹,成田克,遠藤則史,末光眞希,遠田義晴,中澤日出樹

    第78回応用物理学会秋季学術講演会予稿集   2017.9

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  • シリコン基板上シリコン酸化膜の電子線照射による還元反応

    増田悠右,遠田義晴

    第78回応用物理学会秋季学術講演会予稿集   2017.9

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  • Effects of source gases on the properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition

    Hideki Nakazawa, Kohei Magara, Takahiro Takami, Haruka Ogasawara, Yoshiharu Enta, Yushi Suzuki

    Thin Solid Films   636   177 - 182   2017.8

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  • 真空蒸着法によるBi 媒介Ge ナノドットの形成過程評価

    滝田健介,対馬和都,遠田義晴,俵毅彦,舘野功太,章国強,後藤秀樹,岡本浩

    平成29年度電気関係学会東北支部連合大会予稿集   2017.8

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  • 真空蒸着と低温アニールによるBi媒介Geナノドット形成-2

    対馬 和都, 滝田 健介, 中澤 日出樹, 遠田 義晴, 俵 毅彦, 舘野 功太, 章 国強, 後藤 秀樹, 岡本 浩

    第64回応用物理学会春季学術講演会予稿集   2017.3

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  • 真空蒸着と低温アニールによるBi媒介Geナノドット形成-1

    滝田 健介, 対馬 和都, 遠田 義晴, 俵 毅彦, 舘野 功太, 章 国強, 後藤 秀樹, 池田 高之, 水野 誠一郎, 岡本 浩

    第64回応用物理学会春季学術講演会予稿集   2017.3

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  • Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates

    S. Narita, K. Meguro, T. Takami, Y. Enta, H. Nakazawa

    Journal of Crystal Growth   460   27 - 36   2017.2

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  • Activation energy of thermal desorption of silicon oxide layers on silicon substrates

    Yoshiharu Enta, Shodai Osanai, Takahito Ogasawara

    SURFACE SCIENCE   656   96 - 100   2017.2

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    Web of Science

  • Activation Energy of Thermal Desorption of Silicon Oxide Layers on Silicon Substrates

    Yoshiharu Enta, Shodai Osanai, Takahito Ogasawara

    Surface Science   656   96 - 100   2017.1

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  • 希釈ガスとしてH2を用いたプラズマCVD法によるDLC膜特性へのSiおよびN添加効果

    中村 和樹,大橋 遼, 横山 大, 田島 圭一郎, 遠藤 則史, 末光 眞希, 遠田 義晴, 中澤 日出樹

    応用物理学会第71回東北支部学術講演会予稿集   2016.12

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  • Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition

    Hideki Nakazawa, Saori Okuno, Kohei Magara, Kazuki Nakamura, Soushi Miura, Yoshiharu Enta

    Japanese Journal of Applied Physics   55   125501-1 - 125501-9   2016.12

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  • 希釈ガスに水素ガスを用いたプラズマ化学気相成長法によるSi/N共添加ダイヤモンドライクカーボンの膜特性

    中村和樹、大橋遼、横山大、田島圭一郎、遠藤則史、末光眞希、遠田義晴、中澤日出樹

    2016年真空・表面科学合同講演会 第36回表面科学学術講演会 第57回真空に関する連合講演会予稿集   2016.11

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  • 希釈ガスに水素ガスを用いたプラズマCVD法によるN添加およびSi/N共添加DLC膜の特性比較

    中村和樹、大橋遼、横山大、田島圭一郎、遠藤則史、末光眞希、遠田義晴、中澤日出樹

    第30回ダイヤモンドシンポジウム予稿集   2016.11

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  • Silicon Fine Structures Formed by Thermal Desorption of Silicon Dioxide Layer in Vacuum

    Yoshiharu Enta, Takayuki Nagai, Kano Ogawa, Taichi Yoshida, Shodai Osanai, Takahito Ogasawara, Yoshisumi Tsuchimoto, Chikashi Maita, Natsuki Ujiie, Hideki Nakazawa

    Asia NANO 2016: Asian Conference on Nanoscience and Nanotechnology   2016.11

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  • 希釈ガスとしてH2を用いたプラズマCVD法によるDLC膜特性へのSiおよびN添加効果

    中村 和樹,大橋 遼, 横山 大, 田島 圭一郎, 遠藤 則史, 末光 眞希, 遠田 義晴, 中澤 日出樹

    第77回応用物理学会学術講演会予稿集   2016.9

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  • Effects of Temperature and Pressure in Oxynitridation Kinetics on Si(100) with N2O Gas

    Yoshiharu Enta, Makoto Wada, Mariko Arita, and Takahiro Takami

    7th International Symposium on Control of Semiconductor Interfaces ISCSI-VII   2016.6

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  • Structural and electrical properties and current–voltage characteristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition

    Masato Tsuchiya, Kazuki Murakami, Kohei Magara, Kazuki Nakamura, Haruka Ohashi, Kengo Tokuda, Takahiro Takami, Haruka Ogasawara, Yoshiharu Enta, Yushi Suzuki, Satoshi Ando, and Hideki Nakazawa

    Japanese Journal of Applied Physics   55   065502-1 - 065502-6   2016.5

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  • シリコン酸化膜熱脱離によるボイド内リング構造形成の雰囲気依存性

    遠田 義晴,長内 翔大,小笠原 崇仁

    第63回応用物理学会春季学術講演会予稿集   2016.3

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  • Ring structures formed inside voids in SiO2 layer on Si(100) during thermal decomposition(共著)

    Yoshiharu Enta, Shodai Osanai, Taichi Yoshida

    Japanese Journal of Applied Physics   55   028004-1 - 028004-3   2016.2

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  • Angle-Resolved and Resonant Photoemission Study of the Valence Bands of α-La(0001) on W(110)(共著)

    Yoshiharu Enta, Osamu Morimoto, Hiroo Kato, and Yasuo Sakisaka

    World Journal of Condensed Matter Physics   6   17 - 26   2016.2

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  • Interfacial Structure of Oxynitride Layer on Si(100) with Plasma-Excited N2O

    Y. Enta

    International Journal of Applied and Natural Sciences   5 ( 1 )   63 - 68   2016.1

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  • PLD法による AlN/Si(110)上への SiC薄膜 の作製および グラフェンの形成

    成田舜基, 目黒 一煕,高見貴弘,遠田義晴,中澤日出樹

    応用物理学会東北支部 第70回学術講演会要旨   2015.12

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  • シリコン酸窒化膜内殻準位異常シフトの解析

    高見貴弘,和田誠,遠田義晴

    応用物理学会東北支部 第70回学術講演会要旨   2015.12

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  • シリコン酸化膜のボイド状熱脱離とボイド内微細構造

    遠田義晴,永井孝幸,吉田太祐,長内翔大,小笠原崇仁

    応用物理学会東北支部 第70回学術講演会要旨   2015.12

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  • Dry-Oxidation Rate of Si(100) Surface up to 2 nm-Oxide Thickness(共著)

    Y. Enta, M. Arita, M. Wada

    International Journal of Applied and Natural Sciences   4 ( 6 )   51 - 56   2015.10

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  • 気相熱励起N2Oガスを用いたシリコン熱酸窒化反応

    高見 貴弘,遠田 義晴

    第76回応用物理学会学術講演会予稿集   2015.9

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  • Effect of surface adsorbates on chemical shifts of core-level spectra for silicon oxinitride films

    Takahiro TAKAMI, Makoto WADA, Yoshiharu ENTA

    IEICE Technical Report   115 ( 179 )   71 - 74   2015.8

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  • Effects of substrate bias on properties of nitrogen-doped DLC films prepared by radio frequency plasma-enhanced chemical vapor deposition

    Masato TSUCHIYA, Kazuki MURAKAMI, Tatsuhito SATO, Tahahiro TAKAMI, Yoshiharu ENTA, Hideki NAKAZAWA

    IEICE Technical Report   115 ( 179 )   7 - 10   2015.8

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  • Electrical and optical properties of nitrogen-doped DLC films prepared by plasma-enhanced chemical vapor deposition

    M. Tsuchiya, K. Magara, K. Tokuda, Y. Enta, Y. Suzuki, T. Takami, H. Ogasawara, H. Nakazawa

    The 9th International Conference on New Diamonds and Nano Carbons 2015   2015.5

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  • 高周波プラズマ化学気相成長法による窒素添加DLC薄膜の電気的特性および光学的特性

    土屋政人,真柄晃平,徳田健吾,遠田義晴,高見貴弘,中澤日出樹

    応用物理学会第69回東北支部学術講演会予稿集   2014.12

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  • シリコン酸化膜熱脱離時に形成される微細構造形成機構

    長内 翔大,吉田 太祐,遠田 義晴

    第75回応用物理学会学術講演会予稿集   2014.9

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  • シリコン酸窒化膜の内殻準位化学シフトと表面モフォロジーの関連

    高見貴弘, 和田誠, 遠田義晴

    第75回応用物理学会学術講演会予稿集   2014.9

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  • Segregation of Nitrogen in SiON layer on Si measured by angle-resolved photoelectron spectroscopy(共著)

    MakotoWada, Mariko Arita, Yoshiharu Enta

    Photon Factory Activity Report 2012   30B   2013.11

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  • Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum(共著)

    Y. Enta, T. Nagai, T. Yoshida, N. Ujiie, H. Nakazawa

    Journal of Applied Physics   114   114104-1 - 114104-04   2013.9

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  • Void and Nanostructure Formations during Thermal Decomposition of 20-nm-Thick Silicon Oxide Layer on Si(100)(共著)

    Yoshiharu Enta, Kano Ogawa, Takayuki Nagai

    Japanese Journal of Applied Physics   52   031303-1 - 031303-4   2013.3

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  • Precise control of epitaxy of graphene by microfabricating SiC substrate(共著)

    H. Fukidome, Y. Kawai, Th. Seyller, M. Kotsugi, H. Handa, T. Ohkouchi, H. Miyashita, T. Ide, Y. Enta, T. Kinoshita, M. Suemitsu

    Applied Physics Letters   101   041605   2012.7

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  • Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates(共著)

    Takayuki Ide, Yusuke Kawai1, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu

    Japanese Journal of Applied Physics   51   06FD02   2012.6

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  • Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition(共著)

    H. Nakazawa, S. Miura, R. Kamata, S. Okuno, Y. Enta, M. Suemitsu, T Abe

    Japanese Journal of Applied Physics   51   015603   2012.1

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  • Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

    Hideki Nakazawa, Soushi Miura, Ryosuke Kamata, Saori Okuno, Yoshiharu Enta, Maki Suemitsu, Toshimi Abe

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 1 )   2012.1

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    Web of Science

  • Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si(共著)

    Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito and Maki Suemitsu

    Applied Physics Express   4   115104   2011.11

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  • Initial thermal oxidation of Si(100) investigated by Si 2p core-level photoemission(共著)

    Yoshiharu ENTA, Hideki NAKAZAWA, Hiroo KATO, Yasuo SAKISAKA

    Photon Factory Activity Report 2010   28B   57 - 57   2011.11

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  • Control of Epitaxy of Graphene by Crystallographic Orientation of Si Substrate toward Device Applications(共著)

    Hirokazu Fukidome, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Hiroyuki Handa, Hyun-Chul Kang, Hiromi Karasawa, Tetsuya Suemitsu, Taiichi Otsuji, Yoshiharu Enta, Maki Suemitsu, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita

    Journal of Materials Chemistry   21   17242 - 17248   2011.10

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  • シリコン酸化膜の不均一な熱分解(共著)

    遠田義晴,小川可乃,永井孝幸

    電子情報通信学会技術研究報告書   111 ( 176 )   61 - 64   2011.8

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  • Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface(共著)

    Kei Imaizumi, Hiroyuki Hanada, Ryota Takahashi, Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka, Akitaka Yoshigoe, Maki Suemitsu

    Japanese Journal of Applied Physics   50   070105   2011.7

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  • Effect of Interfacial Strain in Wet Oxidation Kinetics on Si(100)(共著)

    Bongjin Simon Mun, Massimiliano Rossi, Yoshiharu Enta

    Journal of Korean Physical Society   58   920 - 923   2011.4

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  • Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure(共著)

    H. Nakazawa, R. Osozawa, Y. Enta, M. Suemitsu

    Diamond and Related Materials   19   1387 - 1392   2010.11

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  • Thermal desorption of silicon oxide layer on Si(100) investigated by Si 2p core-level photoemission(共著)

    Yoshiharu ENTA, Hideki NAKAZAWA, Sumiya SATO, Hiroo KATO, Yasuo SAKISAKA

    Photon Factory Activity Report 2009   27B   67 - 67   2010.11

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  • Changes of chemical bonding of diamond-like carbon films by atomic-hydrogen exposure(共著)

    Hideki NAKAZAWA, Ryoichi OSAZAWA

    Photon Factory Activity Report 2009   27B   66 - 66   2010.11

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  • Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure

    H. Nakazawa, R. Osozawa, Y. Enta, M. Suemitsu

    DIAMOND AND RELATED MATERIALS   19 ( 11 )   1387 - 1392   2010.11

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    Web of Science

  • Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission(共著)

    Y. Enta, H. Nakazawa, S. Sato, H. Kato, Y. Sakisaka

    Journal of Physics: Conference Series   235   012008   2010.6

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  • Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition (共著)

    Hideki NAKAZAWA, Takeshi KINOSHITA, Yuhta KAIMORI, Yuhki ASAI, Maki SUEMITSU1, Toshimi ABE, Kanji YASUI, Tetsuo ENDOH, Takashi ITOH, Yuzuru NARITA, Yoshiharu ENTA, Masao MASHITA

    Japanese Journal of Applied Physics   48   116002   2009.11

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  • Angle-Resolved Photoemission from the Valence-Bands of Ce(111)(共著)

    Osamu MORIMOTO, Hiroo KATO, Yoshiharu ENTA, Yasuo SAKISAKA

    Photon Factory Activity Report 2008   26B   79 - 79   2009.11

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  • Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition

    H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita

    DIAMOND AND RELATED MATERIALS   18 ( 5-8 )   831 - 834   2009.5

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  • Photoemission from the valence bands of Ce(111) on W(110) (共著)

    O. Morimoto, H. Kato, Y. Enta, Y. Sakisaka

    Surface Science   603 ( 13 )   2145 - 2151   2009.4

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  • Atomic Hydrogen Etching of Silicon-Incorporated Diamond-Like Carbon Films Prepared by Pulsed Laser Deposition (共著)

    H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Ito, T. Endo, Y. Narita, M. Mashita

    Diamond & Related Materials   18   831 - 834   2009.1

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  • Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photomission spectroscopy (共著)

    M. Suemitsu, Y. Yamamoto, H. Togashi, Y. Enta, A. Yoshigoe, Y. Teraoka

    Journal of Vacuum Science and Technology   B27   547 - 550   2009.1

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  • Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source (共著)

    Hideki Nakazawa, Yuhki Asai, Takeshi Kinoshita, Maki Suemitsu, Toshimi Abe, Kanji Yasui, Takashi Itoh, Tetsuo Endoh, Yuzuru Narita, Atsushi Konno, Yoshiharu Enta, Masao Mashita

    Japanese Journal of Applied Physics   47 ( 11 )   8491 - 8497   2008.11

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  • In-Situ Observation of Wet Oxidation Kinetics on Si(100) via Ambient Pressure X-ray Photoemission Spectroscopy(共著)

    M. Rossi他

    Journal of Applied Physics   103   044104   2008.2

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  • Real-Time Observation of the Dry Oxidation of the Si(100) Surface with Ambient Pressure X-ray Photoelectron Spectroscopy(共著)

    Y. Enta他

    Applied Physics letters   92   012110   2008.1

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  • Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surfaces by O1s Photoemission Spectroscopy Using Synchrotron Radiation(共著)

    M. Suemitsu他

    Japanese Journal of Applied Physics   46   1888 - 1890   2007.4

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  • Real-Time Observation of Initial Thermal Oxidation on Si(110)-16x2 Surface by Photoemission Spectroscopy(共著)

    M. Suemitsu他

    ECS Transactions   3   311 - 316   2006.11

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  • ALS in Berkeley 滞在雑記

    遠田義晴

    Photon Factory News   24 ( 2 )   55 - 57   2006.8

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  • Integrated Description for Random-Adsorption and 2D-Island Growth Kinetics in Thin Film Growth: Autocatalytic-Reaction Model and Kinetic Monte-Carlo Simulation(共著)

    Hideaki Togashi , Yoshiharu Enta, Maki Suemitsu

    Applied Surface Science   252   5900 - 5906   2006.6

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  • Oxynitridation of Si(100) surface with thermally excited N2O gas(共著)

    Y. Enta, K. Suto, S. Takeda, H. Kato, Y. Sakisaka

    Thin Solid Films   500   129 - 132   2006.4

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  • Si 2p core-level spectra for oxynitride on Si(100) with plasma-excited N2O(共著)

    Y. Enta, K. Suto, H. Kato, Y. Sakisaka

    Photon Factory Activity Report   22 ( B )   79 - 79   2005.11

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  • Soft X-ray fluorescence spectroscopy of FexCo1-xSi(共著)

    N. Nakajima他

    Photon Factory Activity Report   22 ( B )   102 - 102   2005.11

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  • XPS study of the initial oxidation stage on HF-treated Si(100) surfaces(共著)

    F. Hirose他

    Photon Factory Activity Report   22 ( B )   82 - 82   2005.11

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  • N2Oガス気相熱励起法によるシリコン酸窒化膜の形成(共著)

    遠田義晴,武田創太郎

    電子情報通信学会論文誌   J87-C   590 - 591   2004.7

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  • Si初期酸窒化のリアルタイム光電子分光

    遠田義晴

    ナノテクノロジーと高分解能電子分光PF研究会プロシーディング   2003.12

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  • Structure and Thermal Stability of the Chemical Bondings of Diamond-Like Carbon (DLC) Films Prepared by RF Magnetron Sputtering"jointly worked"

    T. Mikami, H. Nakazawa, Y. Enta, M. Suemitsu, M. Mashita

    Journal of The Surface Science Society of Japan   24   411 - 416   2003.7

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  • Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering(共著)

    H. Nakazawa, T. Mikami, Y. Enta, M. Suemitsu, M. Mashita

    Japanese Journal of Applied Physics   42   L676 - L679   2003.6

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Review Papers

  • ANGLE-RESOLVED-PHOTOEMISSION STUDY OF THE ELECTRONIC-STRUCTURE OF THE SI(001)C(4X2) SURFACE

    Y ENTA, S SUZUKI, S KONO

    PHYSICAL REVIEW LETTERS   65 ( 21 )   2704 - 2707   1990.11

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    Web of Science

    PubMed

  • ANGLE-RESOLVED ULTRAVIOLET PHOTOELECTRON SPECTROSCOPIC STUDY OF SI(001)-(2X1)/K AND SI(001)-(2X1)/CS SURFACES

    Y ENTA, T KINOSHITA, S SUZUKI, S KONO

    PHYSICAL REVIEW B   39 ( 2 )   1125 - 1133   1989.1

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    Web of Science

  • ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY STUDY OF THE SI(001)2X1-K SURFACE

    Y ENTA, T KINOSHITA, S SUZUKI, S KONO

    PHYSICAL REVIEW B   36 ( 18 )   9801 - 9804   1987.12

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    Web of Science

  • Band-dispersion-originated photoelectron intensity oscillations during Si epitaxial growth on Si(100)

    Y Enta, Y Takegawa, D Shoji, M Suemitsu, Y Takakuwa, H Kato, N Miyamoto

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA   80   173 - 176   1996.5

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    Web of Science

  • ANGLE-RESOLVED PHOTOEMISSION-STUDY OF A SINGLE-DOMAIN SI(001)2X1-K SURFACE WITH SYNCHROTRON RADIATION - SYMMETRY AND DISPERSION OF SURFACE-STATES

    T ABUKAWA, T KASHIWAKURA, T OKANE, Y SASAKI, H TAKAHASHI, Y ENTA, S SUZUKI, S KONO, S SATO, T KINOSHITA, A KAKIZAKI, T ISHII, CY PARK, SW YU, K SAKAMOTO, T SAKAMOTO

    SURFACE SCIENCE   261 ( 1-3 )   217 - 223   1992.1

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    Web of Science

  • ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF CLEAN AND ADSORBED SI(001) SURFACES - 2X1, C(4X2), 2X1-NA AND 2X2-GA

    Y ENTA, S SUZUKI, S KONO

    SURFACE SCIENCE   242 ( 1-3 )   277 - 283   1991.2

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    Web of Science

  • 31a-M2-1 Si(111)√3x√3-Sbの角度分解正逆光電子分光(表面・界面)

    木下 豊彦, 遠田 義晴, 太田 寛, 八重樫 裕幸, 鈴木 章二, 河野 省三

    年会講演予稿集   43 ( 2 )   326 - 326   1988.3

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    CiNii Books

  • 31a-M2-3 Si(oo1)2×1-sの角度分解UPS(表面・界面)

    遠田 義晴, 木下 豊彦, 鈴木 章二, 河野 省三

    年会講演予稿集   43 ( 2 )   327 - 327   1988.3

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    CiNii Books

  • 28a-LM-3 角度分解逆光電子分光法 : グラファイトの非占有電子帯構造(イオン結晶・光物性)

    大澤 日佐雄, 高橋 隆, 木下 豊彦, 遠田 義晴, 佐川 敬, 寿栄松 宏仁

    年会講演予稿集   42 ( 2 )   223 - 223   1987.3

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    CiNii Books

  • 30p-H-14 Si(111)√3×√3-Ag表面の内殻準位シフト(表面・界面)

    河野 省三, 東山 和幸, 木下 豊彦, 宮原 恒〓, 加藤 博雄, 大沢 日佐雄, 遠田 義晴, 前田 文彦, 八重樫 裕幸

    年会講演予稿集   42 ( 2 )   418 - 418   1987.3

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    CiNii Books

  • 28a-LM-6 重希土類の3dレベルXPS(イオン結晶・光物性)

    荒井 宏, 高桑 雄二, 高橋 隆, 宮原 恒呈, 八重樫 裕幸, グナセカラ N., 遠田 義晴, 前田 文彦, 木下 豊彦, 太田 俊明, 佐川 敬

    年会講演予稿集   42 ( 2 )   224 - 224   1987.3

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    CiNii Books

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Social Activities

  • 通研共同プロジェクト研究会

    2008.04 - 2009.03

  • 通研共同プロジェクト研究会

    2008.02