Nanotechnology/Materials / Crystal engineering

電気関係学会東北支部連合大会実行委員会

応用物理学会東北支部学術講演会現地実行委員会

電子部品・材料研究会（CPM）現地実行委員会

電気学会電子・情報・システム部門大会開催地区実行委員会

電子部品・材料研究会（CPM）現地実行委員会

電子部品・材料研究会（CPM）現地実行委員会

電気関係学会東北支部連合大会実行委員会

THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS

日本表面真空学会

応用物理学会

ニューダイヤモンドフォーラム

Hydrogen gas effects on the properties of boron carbide films prepared by magnetron sputtering

Nishida Tatsuya, Taniguchi Ryu, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hirokazu Fukidome, Hideki Nakazawa

122 ( 147 )   14 - 17   2022.7

Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated, nitrogen-doped diamond-like carbon films

Hiroya Osanai, Kazuki Nakamura, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu, Hideki Nakazawa

Thin Solid Films   745   139100-1 - 139100-15   2022.3

Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition

Y. Sasaki, H. Osanai, Y. Ohtani, Y. Murono, M. Sato, Y. Kobayashi, Y. Enta, Y. Suzuki, H. Nakazawa

Diamond and Related Materials   123   108878-1 - 108878-12   2022.3

Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen

H. Nakazawa, K. Nakamura, H. Osanai, Y. Sasaki, H. Koriyama, Y. Kobayashi, Y. Enta, S. Suzuki, M. Suemitsu

Diamond and Related Materials   122   108809-1 - 108809-12   2022.2

Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition

K. Nakamura, H. Ohashi, Y. Enta, Y. Kobayashi, Y. Suzuki, M. Suemitsu, H. Nakazawa

Thin Solid Films   736   138923-1 - 138923-11   2021.10

Effects of H2 and Ar dilution on the optical and electrical properties of Si and N doped diamond-like carbon films by plasma-enhanced chemical vapor deposition

Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa

121 ( 220 )   23 - 28   2021.10

Hydrogen effects on the properties of BCN films deposited by magnetron sputtering

Ryu Taniguchi, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Hirokazu Fukidome, Hideki Nakazawa

120 ( 217 )   23 - 26   2020.10

Effects of SiC low-temperature buffer layer on SiC epitaxial growth on AlN/Si(110) substrate

Hiroki Kasai, Yuki Nara, Hideki Nakazawa

120 ( 217 )   7 - 10   2020.10

Influence of the terrace width of pentacene underlayers on the crystallinity of C60 overlayers

K. Nakata, H. Nakazawa, H. Okamoto, Y. Kobayashi

Thin Solid Films   692   137638-1 - 137638-5   2019.12

Annealing effects on the properties of nitrogen doped DLC films

H. Osanai, K. Nakamura, H. Koriyama, Y. Kobayashi, Y. Enta, Y. Suzuki, M. Suemitsu, H. Nakazawa

119 ( 217 )   9 - 14   2019.11

Growth of 3C-SiC(111) on AlN/off-axis Si(111) hetero-structure and formation of epitaxial graphene thereon

S. Narita, Y. Nara, Y. Enta, H. Nakazawa

Japanese Journal of Applied Physics   58   SIIA16-1 - SIIA16-8   2019.8

Formation of an AlN intermediate layer on an off-axis Si(110) substrate and SiC heteroepitaxial growth thereon

Hideki Nakazawa, Yuki Nara, Hiroki Kasai

119 ( 181 )   23 - 28   2019.8

Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of AlN/Si(110) substrate

Y. Nara, H. Nakazawa

Japanese Journal of Applied Physics   58   SIIA18-1 - SIIA18-6   2019.8

Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate

Yuki Nara, Hideki Nakazawa

JAPANESE JOURNAL OF APPLIED PHYSICS   58 ( SI )   SIIA18-1 - SIIA18-6   2019.8

Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon

Syunki Narita, Yuki Nara, Yoshiharu Enta, Hideki Nakazawa

JAPANESE JOURNAL OF APPLIED PHYSICS   58 ( SI )   SIIA16-1 - SIIA16-8   2019.8

Study on the formation mechanism of bismuth -mediated Ge nanodots fabricated by vacuum evaporation

K. Tsushima, K. Takita, H. Nakazawa, T. Tawara, K. Tateno, G. Zhang, H. Gotoh, H. Okamoto

Japanese Journal of Applied Physics   58   SDDG-1 - SDDG-5   2019.6

Preparation and characterization of carbon related thin films

Hideki Nakazawa

118 ( 461 )   37 - 40   2019.2

Thermal stability of silicon and nitrogen doped DLC thin films

Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu

118 ( 179 )   99 - 104   2018.10

Effects of nitrogen doping on the properties of Si-doped DLC films

Kazuki Nakamura, Haruka Oohashi, Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu, Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa

118 ( 179 )   1 - 6   2018.8

Growth of graphene on SiC/AlN/Si(110) substrates

Hideki Nakazawa, Syunki Narita, Yuki Nara, Yoshiharu Enta

118 ( 179 )   7 - 12   2018.8

Investigation of formation conditions of SiC buffer layers for SiC/SiC buffer layer/AlN/Si(110) multilayer structures

Yuki Nara, Asahi Kudo, Hideki Nakazawa

118 ( 179 )   13 - 16   2018.8

Study on the formation mechanism of Bi-mediated Ge nanodots fabricated by vacuum evaporation

Kazuto Tsushima, Kensuke Takita, Hideki Nakazawa, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh, Takayuki Ikeda, Seiichiro Mizuno, Hiroshi Okamoto

118 ( 179 )   21 - 24   2018.8

Impacts of substrate bias and dilution gas on the properties of Si-incorporated diamond-like carbon films by plasma deposition using organosilane as a Si source

H. Nakazawa, S. Miura, K. Nakamura, Y. Nara

Thin Solid Films   654   38 - 48   2018.5

Synthesis of boron/nitrogen-incorporated diamond-like carbon films by pulsed laser deposition using nitrogen gas and a boron-containing graphite target”jointly worked"

H. Nakazawa, R. Osozawa, Y. Mohnai, Y. Nara

Japanese Journal of Applied Physics   56   105501-1 - 105501-7   2017.10

Effects of source gases on the properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition"jointly worked"

H. Nakazawa, K. Magara, T. Takami, H. Ogasawara, Y. Enta, Y. Suzuki

Thin Solid Films   636   177 - 182   2017.8

Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition "jointly worked"

Yuki Nara, Syunki Narita, Hideki Nakazawa

117   7 - 10   2017.8

Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates”jointly worked"

S. Narita, K. Meguro, T. Takami, Y. Enta, H. Nakazawa

Journal of Crystal Growth   260   27 - 36   2017.2

Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition”jointly worked"

H. Nakazawa, S. Okuno, K. Magara, K. Nakamura, S. Miura, Y. Enta

Japanese Journal of Applied Physics   55   125501-1 - 125501-9   2016.12

Structural and electrical properties and current-voltage characterristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition”jointly worked"

M. Tsuchiya, K. Murakami, K. Magara, K. Nakamura, H. Ohashi, K. Tokuda, T. Takami, H. Ogasawara, Y. Enta, Y. Suzuki, S. Ando, H. Nakazawa

Japanese Journal of Applied Physics   55   065502-1 - 065502-6   2016.6

Growth of epitaxial SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"

Syunki Narita, Kazuki Meguro, Hideki Nakazawa

115   11 - 14   2015.8

Effects of substrate bias on properties of nitrogen-doped DLC films prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"

M. Tsuchiya, K. Murakami, T. Sato, T. Takami, Y. Enta, Hideki Nakazawa

115   7 - 10   2015.8

Preparation and characterization of SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"

Kazuki Meguro, Syunki Narita, Hideki Nakazawa

115   1 - 5   2015.8

Relaxation of Cs atomic polarization at surface coatings characterized by X-ray photoelectron spectroscopy"jointly worked"

K. Kushida, T. Niwano, T. Morita, T. Shimizu, K. Meguro, H. Nakazawa, A. Hatayama

Japanese Journal of Applied Physics   54   066401-1 - 066401-5   2015.6

Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane"jointly worked"

H. Nakazawa, D. Suzuki, T. Narita, K. Meguro, M. Tsuchiya

Journal of Crystal Growth   418   52 - 56   2015.5

Deposition of silicon-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition using an intermittent supply of organosilane"jointly worked"

H. Nakazawa, R. Kmata, S. Okuno

Dimoand and Related Materials   51   7 - 13   2015.1

Effects of frequency of pulsed substrate bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition"jointly worked"

H. Nakazawa, R. Kmata, S. Miura, S. Okuno

Thin Solid Films   574   93 - 98   2015.1

Characterization of nitrogen-doped DLC film prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"

Masato Tsuchiya, Kohei Magara, Kengo Tokuda, Hideki Nakazawa

114   1 - 5   2014.9

SiC heteroepitaxial growth on an AlN layer formed on off-axis Si(001) substrates "jointly worked"

Kazuki Meguro, Tsugutada Narita, Toshihiro Uemura, Hideki Nakazawa

114   7 - 12   2014.9

Formation of an interfacial buffer layer for 3C-SiC heteroepitaxy on AlN/Si substrates "jointly worked"

K. Meguro, T. Narita, K. Noto, H. Nakazawa

Materials Science Forum   778-780   251 - 254   2014.2

Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum "jointly worked"

Y. Enta, T. Nagai, T. Yoshida, N. Ujiie, H. Nakazawa

Journal of Applied Physics   114   114104-1 - 114104-4   2013.9

Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition "jointly worked"

H. Nakazawa, R. Kmata, S. Miura, S. Okuno

Thin Solid Films   539   134 - 138   2013.7

Surface enhanced infrared absorption spectra on pulsed laser deposited silver island films "jointly worked"

H. Nakashima, Y. Sasaki, R. Osozawa, Y. Kon, H. Nakazawa, Y. Suzuki

Thin Solid Films   536   166 - 171   2013.6

Effects of pulse bias on structure and properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition（共著）

H. Nakazawa, S. Miura, R. Kamata, S. Okuno, M. Suemitsu, T. Abe

Applied Surface Science   264   625 - 632   2013.1

Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi（共著）

K. Yasui, Y. Anezaki, K. Sato, A. Kato, T. Kato, M. Suemitsu, Y. Narita, H. Nakazawa

ECS Transactions   50   171 - 177   2012.12

Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE"jointly worked"

112   97 - 100   2012.10

Formation of AlN layers on Si substrates and growth of 3C-SiC on AlN/Si substrates "jointly worked"

112   39 - 44   2012.10

Heteroepitaxial growth of 3C-SiC on an AlN intermediate layer on Si(100) substrate "jointly worked"

112   5 - 10   2012.8

Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics"jointly worked"

112   11 - 15   2012.8

Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometallic Compounds "jointly worked"

Yutaka Anezaki, Takashi Otani, Haruki Goto, Takahiro Kato, Ariyuki Kato, Maki Suemitsu, Yuzuru Narita, Hideki Nakazawa, Kanji Yasui

Journal of The Surface Science Society of Japan   33   376 - 381   2012.7

Hydrogen Effects of the Properties of Silicon/Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition（共著）

H. Nakazawa, S. Okuno, S. Miura, R. Kamata

Japanese Journal of Applied Physics   51   075801-1 - 075801-7   2012.7

Characteristics of Silicon/Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition（共著）

H. Nakazawa, S. Miura, R. Kamata, S. Okuno, Y. Enta, M. Suemitsu, T. Abe

Japanese Journal of Applied Physics   51   015603-1 - 015603-7   2012.1

Temperature dependence of the optical gap of diamond-like carbon films investigated by a piezoelectric photothermal spectroscopy（共著）

W. Ding, Y. Nakano, R. Yamamoto, K. Sakai, H. Nakazawa, A. Fukuyama, T. Ikari

Energy Procedia   10   66 - 70   2011.12

SiC層中に埋め込まれたGe・SiCドットの発光特性（共著）

大谷孝史，姉崎　豊，浅野　翔，加藤有行，成田　克，中澤日出樹，加藤孝弘，安井寛治

電子情報通信学会技術報告   CPM111   15 - 20   2011.8

レーザーアブレーション法によるDLC膜特性に及ぼすB、N添加の影響（共著）

毛内裕介，遅澤遼一，中澤日出樹

電子情報通信学会技術報告   CPM111   37 - 42   2011.8

プラズマCVD法によるSiおよびN同時添加DLC膜特性に対する水素の影響（共著）

奥野さおり，三浦創史，鎌田亮輔，中澤日出樹

電子情報通信学会技術報告   CPM111   31 - 36   2011.8

レーザーアブレーション法によるAlN成長のSi基板面方位依存性（共著）

鈴木大樹，熊谷知貴，中澤日出樹

電子情報通信学会技術報告   CPM111   1 - 6   2011.8

Effects of hydrogen on the properties of Si-incorporated diamond-like carbon films prepared by pulsed laser deposition（共著）

H. Nakazawa, R. Osozawa,T. Okuzaki, N. Sato, M. Suemitsu, T. Abe

Diamond and Related Materials   20   485 - 491   2011.4

Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure（共著）

H. Nakazawa, R. Osozawa, Y. Enta, M. Suemitsu

Dimoand and Related Materials   19   1387 - 1392   2010.11

パルスモードホットメッシュCVD法によるGaN成長条件の最適化（共著）

永田一樹, 里本宗一, 片桐裕則, 神保和夫, 末光眞希, 遠藤哲郎, 伊藤　隆, 中澤日出樹, 成田　克, 安井寛治

電子情報通信学会技術報告   CPM110   55 - 58   2010.10

レーザーアブレーション法によるSi基板上AlN薄膜の形成（共著）

中澤日出樹, 鈴木大樹, 遲澤遼一, 岡本　浩

電子情報通信学会技術報告   CPM110   39 - 44   2010.7

Silicon thermal oxidation and its thermal deposition investigated by Si 2p core-level photoemission（共著）

Y. Enta, H. Nakazawa, S. Sato, H. Kato, Y. Sakisaka

Journal of Physics   235   012008-1 - 012008-6   2010.6

Mechanical and tribological properties of boron, nitrogen-coincorporated diamond-like carbon films prepared by reactive radio-frequency magnetron Sputtering（共著）

H. Nakazawa, A. Sudoh, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita

Diamond and Related Materials   19   503 - 506   2010.5

Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio- Frequency Plasma-Enhanced Chemical Va-por Deposition（共著）

H. Nakazawa, T. Kinoshita, Y. Kaimori, Y. Asai, M. Suemitsu, T. Abe, K. Yasui, T. Endoh, T. Itoh, Y. Narita, Y. Enta, M. Mashita

Japanese Journal of Applied Physics   48   116002-1 - 116002-8   2009.11

有機シランを用いたプラズマCVD法によるダイヤモンドライクカーボン薄膜の膜特性評価（共著）

三浦創史,中澤日出樹,西崎圭太,末光眞希,安井寛治,伊藤　隆,遠藤哲郎,成田　克

電子情報通信学会技術報告   CPM109   13 - 18   2009.8

間欠ガス供給を用いたホットメッシュCVD法によるSi上GaNエピタキシャル成長（共著）

齋藤　健,永田一樹,末光眞希,遠藤哲郎,伊藤　隆,中澤日出樹,成田　克,高田雅介,赤羽正志,安井寛治

電子情報通信学会技術報告   CPM109   61 - 66   2009.8

原子状水素照射によるダイヤモンドライクカーボン膜の化学結合状態の変化（共著）

遲澤遼一,中澤日出樹,奥崎知秀,佐藤直之,遠田義晴,末光眞希

電子情報通信学会技術報告   CPM109   19 - 24   2009.8

Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition （共著）

Y. Komae, K. Yasui, M. Suemitsu, T. Endoh, T. Ito, H. Nakazawa, Y. Narita, M. Takata, T. Akahane

Japanese Journal of Applied Physics   48   076509-1 - 076509-5   2009.7

Atomic hydrogen etching of silicon-incorporated diamond- like carbon films prepared by pulsed laser deposition（共著）

H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita

Diamond and Related Materials   18   831 - 834   2009.6

The growth of GaN films by alternate source gas supply hot-mesh CVD method （共著）

Y. Komae, T. Saitou, M. Suemitsu, T. Ito, T. Endoh, H. Nakazawa, Y. Narita, M. Takata, T. Akahane, K. Yasui

Thin Solid Films   517   3528 - 3531   2009.4

Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate（共著）

Y. Miyamoto, H. Handa, E. Saito, A. Konno, Y. Narita, M. Suemitsu, H. Fukidome, T. Ito, K. Yasui, H. Nakazawa, T. Endoh

e-Journal of Surface Science and Nanotechnology   7   107 - 109   2009.2

Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source（共著）

H. Nakazawa, Y. Asai, T. Kinoshita, M. Suemitsu, T. Abe, K. Yasui, T. Itoh, T. Endoh, Y. Narita, A. Konno, Y. Enta, M. Mashita

Japanese Journal of Applied Physics   47   8491 - 8497   2008.11

パルスモードホットメッシュCVD法による窒化物半導体のエピタキシャル成長（共著）

小前泰彰, 齋藤　健, 末光眞希, 伊藤　隆, 遠藤哲郎, 中澤日出樹, 成田　克, 高田雅介, 安井寛治, 赤羽正志

電子情報通信学会技術報告   108   7 - 12   2008.10

“Temperature oscillation” as a real-time monitoring of the growth of 3C–SiC on Si substrate（共著）

E. Saito, A. Konno, T. Ito, K. Yasui, H. Nakazawa, T. Endoh, Y. Narita, M. Suemitsu

Applied Surface Science   254   6235 - 6237   2008.7

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD （共著）

K. Tamura, Y. Kuroki, K. Yasui, M. Suemitsu, T. Itoh, T. Endoh, H. Nakazawa, Y. Narita, M. Takata, T. Akahane

Thin Solid Films   516   659 - 662   2008.1

Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium coated tungsten mesh （共著）

Y. Fukada, K. Yasui, Y. Kuroki, M. Suemitsu, T. Itoh, T. Endoh, H. Nakazawa, Y. Narita, M. Takata, T. Akahane

Japanese Journal of Applied Physics   47   573 - 576   2008.1

Effects of substrate bias voltage on structural, mechanical and tribological properties of diamond-like carbon films prepared plasma-enhanced chemical vapor deposition using methane and argon gases（共著）

H. Nakazawa, S. Kato, Y. Asai, M. Mashita

Japanese Journal of Applied Physics   47   231 - 236   2008.1

Comparison of film properties between hydrogenated and unhydrogenated diamond-like carbon films prepared by radio-frequency magnetron sputtering "jointly worked"

H. Nakazawa, M. Kudo, M. Mashita

Japanese Journal of Applied Physics   46   7816 - 7823   2007.12

ホットメッシュCVD法によるGaN成長-ルテニウムコーティッドタングステンメッシュの効果- （共著）

深田祐介，安部和貴，黒木雄一郎，末光眞希，伊藤　隆，成田　克，遠藤哲郎，中澤日出樹，高田雅介，安井寛治，赤羽正志

信学技報   2007.11

Structural changes of diamond-like carbon films due to atomic hydrogen exposure during annealing "jointly worked"

H. Nakazawa, T. Kawabata, M. Kudo, M. Mashita

Applied Surface Science   253   4188 - 4196   2007.2

Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane "jointly worked"

Y. Narita, A. Konno, H. Nakazawa, T. Itoh, K. Yasui, T. Endoh, M. Suemitsu

Japanese Journal of Applied Physics   46   L40 - L42   2007.1

Low-temperature heteroepitaxial growth of 3C-SiC(111) on Si(110) substrate using monomethylsilane "jointly worked"

A. Konno, Y. Narita, T. Itoh,K. Yasui, H. Nakazawa, T. Endoh, M. Suemitsu

ECS Transactions   3   449 - 455   2006.11

Effects of hydrogen on film properties of diamond-like carbon films prepared by reactive radio-frequency magnetron sputtering using hydrogen gas "jointly worked"

T. Mikami, H. Nakazawa,M. Kudo, M. Mashita

Thin Solid Films   488   87 - 92   2005.9

Thermal effects on structural properties of diamond-like carbon films prepared by pulsed laser deposition "jointly worked"

H. Nakazawa, Y. Yamagata, M. Suemitsu, M. Mashita

Thin Solid Films   467   98 - 103   2004.11

Adsorption kinetics of dimethylsilane at Si(001)

K. Senthil, H. Nakazawa, M. Suemitsu

Applied Surface Science   224   183 - 187   2004.3

Adsorption and desorption kinetics of organosilanes at Si(001) surfaces "jointly worked"

K. Senthil, H. Nakazawa, M. Suemitsu

Japanese Journal of Applied Physics   42   6804 - 6808   2003.11

Structure and Thermal Stability Bonddings of Diamond-Like Carbon (DLC) Films Prepared by RF Magnetron Sputtering "jointly worked"

M. Mikami, H. Nakazawa, Y. Enta, M. Suemitsu, M. Mashita

Journal of The Surface Science Society of Japan   24   411 - 416   2003.7

Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates "jointly worked"

M. Mashita, T. Numata,H. Nakazawa, Y. Kajikawa,B. H. Koo, H. Makino,T. Yao

Japanese Journal of Applied Physics   42   L807 - L809   2003.7

Mechanism of the Formation of Single-Domain SiC Films on Si Using Organo-Silane Gas "jointly worked"

H. Nakazawa, M. Suemitsu, M. Mashita

Journal of The Surface Science Society of Japan   24   429 - 433   2003.7

Structure, Chemical bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering "jointly worked"

H. Nakazawa, T. Mikami,Y. Enta, M. Suemitsu,M. Mashita

Japanese Journal of Applied Physics   42   L676 - L679   2003.6

Formation　of　quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer "jointly worked"

H. Nakazawa, M. Suemitsu

Journal of Applied Physics   93   5282 - 5286   2003.5

Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organosilane buffer layer"jointly worked"

H. Nakazawa, M. Suemitsu

Materials Science Forum   389-393   351 - 354   2002

Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: in situ observations and detailed modeling of the growth”jointly worked"

T. Murata, H. Nakazawa, Y. Tsukidate, M. Suemitsu

Applied Physics Letters   79   746 - 748   2001.8

Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy”jointly worked"

H. Nakazawa, M. Suemitsu

Applied Physics Letters   79   755 - 757   2001.8

Role of hydrogen preparing in the hydrogen desorption kinetics from Si(100)-2x1: effects of hydrogenation-gas and thermal history”jointly worked"

H. Nakazawa, M. Suemitsu, N. Miyamoto

Surface Science   465   177 - 185   2000.10

Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed-desorption studies on H/, C2H2/, and MMS/Si(100) "jointly worked"

H. Nakazawa, M. Suemitsu

Applied Surface Science   162-163   139 - 145   2000.8

Gas-Source MBE of SiC/Si using monomethylsilane"jointly worked"

H. Nakazawa, M. Suemitsu, S. Asami

Thin Solid Films   369   269 - 272   2000.7

Formation of high quality SiC on Si(100) at 900ºC using monomethylsilane gas-source MBE

H. Nakazawa, M. Suemitsu

Materials Science Forum   338-342   269 - 272   2000

Si系ガスソースMBEに関する研究

中澤日出樹

1999.3

Higher-order desorption kinetics of hydrogen from silane/, disilane/, and D/Si(100)

H. Nakazawa, M. Suemitsu, S. Asami

Applied Surface Science   130-132   298 - 303   1998.6

Effects of surface phosphorus on the kinetics of hydrogen desorption from silane adsorbed Si(100) surface at room temperatures

M. Suemitsu, Y. Tsukidate, H. Nakazawa, Y. Enta

Journal of Vacuum Sicence and Technology A   16   1772 - 1774   1998.5

Effect of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy

H. Nakazawa, M. Suemitsu, N. Miyamoto

Japanese Journal of Applied Physics Part2   36   L703 - L704   1997.6

Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy

M. Suemitsu, H. Nakazawa,T. Morita, N. Miyamoto

Japanese Journal of Applied Physics Part2   35   L625 - L628   1997.5

A model for the temperature-dependent adsorption kinetics of SiH4 on Si(100)

M. Suemitsu, K.J. Kim, H. Nakazawa, N. Miyamoto

Applied Surface Science   107   81 - 84   1996.11

H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE

H. Nakazawa, M. Suemitsu, N. Miyamoto

Surface Science   357-358   555 - 559   1996.6

SiガスソースMBEにおける水素吸着脱離過程に関する研究

中澤日出樹

1996.3

Temperature-programmed-desorption study of the process of atomic deuterium adsorption onto Si(100)2x1

M. Suemitsu, H. Nakazawa, N. Miyamoto

Applied Surface Science   82-83   449 - 453   1994.12

基礎物理学実験の手引き （共著）第１版

川口節雄, 岡崎禎子, 道上宗巳, 宮永崇史, 市村雅一, 中島伸夫, 小豆畑敬, 中島健介, 中澤日出樹（ Role： Joint author）

弘前大学出版会  2007.3 

第7回弘前大学と八戸高専とのシーズ提案会実行委員

2007.11 - 2008.01