Personnel Information

写真b

NAKAZAWA HIDEKI


Title

Associate Professor

Academic Society Affiliations 【 display / non-display

  • LPM2021 The 22th International Symposium on Laser Precision Microfabrication

Field of expertise (Grants-in-aid for Scientific Research classification) 【 display / non-display

  • Inorganic materials/Physical properties

  • Applied materials

  • Thin film/Surface and interfacial physical properties

  • General applied physics

  • Electronic materials/Electric materials

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Papers 【 display / non-display

  • English, Temperature-programmed-desorption study of the process of atomic deuterium adsorption onto Si(100)2x1”jointly worked", Applied Surface Science, vol.82-83 (p.449 - 453) , 1994.12, M. Suemitsu, H. Nakazawa, N. Miyamoto

    Research paper (international conference proceedings), Joint Work, Thin film/Surface and interfacial physical properties, General applied physics, Electronic materials/Electric materials

  • English, H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE”jointly worked", Surface Science, vol.357-358 (p.555 - 559) , 1996.06, H. Nakazawa, M. Suemitsu, N. Miyamoto

    Research paper (international conference proceedings), Joint Work, General applied physics, Thin film/Surface and interfacial physical properties, Electronic materials/Electric materials

  • English, A model for the temperature-dependent adsorption kinetics of SiH4 on Si(100)”jointly worked", Applied Surface Science, vol.107 (p.81 - 84) , 1996.11, M. Suemitsu, K.J. Kim, H. Nakazawa, N. Miyamoto

    Research paper (international conference proceedings), Joint Work, Thin film/Surface and interfacial physical properties, General applied physics, Electronic materials/Electric materials

  • English, Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy"jointly worked", Japanese Journal of Applied Physics Part2, vol.35 (p.L625 - L628) , 1997.05, M. Suemitsu, H. Nakazawa,T. Morita, N. Miyamoto

    Research paper (scientific journal), Joint Work, Thin film/Surface and interfacial physical properties, Crystal engineering, Electronic materials/Electric materials

  • English, Effect of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy"jointly worked", Japanese Journal of Applied Physics Part2, vol.36 (p.L703 - L704) , 1997.06, H. Nakazawa, M. Suemitsu, N. Miyamoto

    Research paper (scientific journal), Joint Work, Thin film/Surface and interfacial physical properties, Crystal engineering, Electronic materials/Electric materials

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