Papers - NAKAZAWA HIDEKI
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Effects of O doping on Si- and N-doped diamond-like carbon films
Yuya Yamazaki, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa
123 ( 395 ) 38 - 41 2024.2
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Photovoltaic and mechanical properties of boron carbide films prepared by magnetron sputtering
Tatsuya Nishida, Masayoshi Sato, Yoshiharu Enta, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa
Japanese Journal of Applied Physics 63 ( 1 ) 01SP38-1 - 01SP38-12 2024.1
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Mechanical properties and heat resistance of Si- and N-doped diamond-like carbon films
Yuya Yamazaki, Yuya Sasaki, Hideki Nakazawa
123 ( 230 ) 33 - 36 2023.10
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Fabrication of SiC/AlN multilayer structure on 3°off-axis Si(110) substrate and graphene formation thereon
Ryosuke Saito, Yuki Nara, Daiki Kasai, Haruto Koriyama, Yoshiharu Enta, Hideki Nakazawa
123 ( 142 ) 29 - 32 2023.7
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Photovoltaic properties of boron carbide thin films prepared by magnetron sputtering using hydrogen gas
Tatsuya Nishida, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Hideki Nakazawa
122 ( 392 ) 35 - 38 2023.2
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Hydrogen gas effects on the properties of boron carbide films prepared by magnetron sputtering
Nishida Tatsuya, Taniguchi Ryu, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hirokazu Fukidome, Hideki Nakazawa
122 ( 147 ) 14 - 17 2022.7
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Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated, nitrogen-doped diamond-like carbon films
Hiroya Osanai, Kazuki Nakamura, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu, Hideki Nakazawa
Thin Solid Films 745 139100-1 - 139100-15 2022.3
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Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Y. Sasaki, H. Osanai, Y. Ohtani, Y. Murono, M. Sato, Y. Kobayashi, Y. Enta, Y. Suzuki, H. Nakazawa
Diamond and Related Materials 123 108878-1 - 108878-12 2022.3
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Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen
H. Nakazawa, K. Nakamura, H. Osanai, Y. Sasaki, H. Koriyama, Y. Kobayashi, Y. Enta, S. Suzuki, M. Suemitsu
Diamond and Related Materials 122 108809-1 - 108809-12 2022.2
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Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
K. Nakamura, H. Ohashi, Y. Enta, Y. Kobayashi, Y. Suzuki, M. Suemitsu, H. Nakazawa
Thin Solid Films 736 138923-1 - 138923-11 2021.10
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Effects of H2 and Ar dilution on the optical and electrical properties of Si and N doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa
121 ( 220 ) 23 - 28 2021.10
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Hydrogen effects on the properties of BCN films deposited by magnetron sputtering
Ryu Taniguchi, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Hirokazu Fukidome, Hideki Nakazawa
120 ( 217 ) 23 - 26 2020.10
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Effects of SiC low-temperature buffer layer on SiC epitaxial growth on AlN/Si(110) substrate
Hiroki Kasai, Yuki Nara, Hideki Nakazawa
120 ( 217 ) 7 - 10 2020.10
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Influence of the terrace width of pentacene underlayers on the crystallinity of C60 overlayers
K. Nakata, H. Nakazawa, H. Okamoto, Y. Kobayashi
Thin Solid Films 692 137638-1 - 137638-5 2019.12
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Annealing effects on the properties of nitrogen doped DLC films
H. Osanai, K. Nakamura, H. Koriyama, Y. Kobayashi, Y. Enta, Y. Suzuki, M. Suemitsu, H. Nakazawa
119 ( 217 ) 9 - 14 2019.11
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Growth of 3C-SiC(111) on AlN/off-axis Si(111) hetero-structure and formation of epitaxial graphene thereon
S. Narita, Y. Nara, Y. Enta, H. Nakazawa
Japanese Journal of Applied Physics 58 SIIA16-1 - SIIA16-8 2019.8
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Formation of an AlN intermediate layer on an off-axis Si(110) substrate and SiC heteroepitaxial growth thereon
Hideki Nakazawa, Yuki Nara, Hiroki Kasai
119 ( 181 ) 23 - 28 2019.8
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Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of AlN/Si(110) substrate
Y. Nara, H. Nakazawa
Japanese Journal of Applied Physics 58 SIIA18-1 - SIIA18-6 2019.8
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Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate
Yuki Nara, Hideki Nakazawa
JAPANESE JOURNAL OF APPLIED PHYSICS 58 ( SI ) SIIA18-1 - SIIA18-6 2019.8
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Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon
Syunki Narita, Yuki Nara, Yoshiharu Enta, Hideki Nakazawa
JAPANESE JOURNAL OF APPLIED PHYSICS 58 ( SI ) SIIA16-1 - SIIA16-8 2019.8
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Study on the formation mechanism of bismuth -mediated Ge nanodots fabricated by vacuum evaporation
K. Tsushima, K. Takita, H. Nakazawa, T. Tawara, K. Tateno, G. Zhang, H. Gotoh, H. Okamoto
Japanese Journal of Applied Physics 58 SDDG-1 - SDDG-5 2019.6
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Preparation and characterization of carbon related thin films
Hideki Nakazawa
118 ( 461 ) 37 - 40 2019.2
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Thermal stability of silicon and nitrogen doped DLC thin films
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu
118 ( 179 ) 99 - 104 2018.10
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Effects of nitrogen doping on the properties of Si-doped DLC films
Kazuki Nakamura, Haruka Oohashi, Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu, Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa
118 ( 179 ) 1 - 6 2018.8
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Growth of graphene on SiC/AlN/Si(110) substrates
Hideki Nakazawa, Syunki Narita, Yuki Nara, Yoshiharu Enta
118 ( 179 ) 7 - 12 2018.8
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Investigation of formation conditions of SiC buffer layers for SiC/SiC buffer layer/AlN/Si(110) multilayer structures
Yuki Nara, Asahi Kudo, Hideki Nakazawa
118 ( 179 ) 13 - 16 2018.8
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Study on the formation mechanism of Bi-mediated Ge nanodots fabricated by vacuum evaporation
Kazuto Tsushima, Kensuke Takita, Hideki Nakazawa, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh, Takayuki Ikeda, Seiichiro Mizuno, Hiroshi Okamoto
118 ( 179 ) 21 - 24 2018.8
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Impacts of substrate bias and dilution gas on the properties of Si-incorporated diamond-like carbon films by plasma deposition using organosilane as a Si source
H. Nakazawa, S. Miura, K. Nakamura, Y. Nara
Thin Solid Films 654 38 - 48 2018.5
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Synthesis of boron/nitrogen-incorporated diamond-like carbon films by pulsed laser deposition using nitrogen gas and a boron-containing graphite target”jointly worked"
H. Nakazawa, R. Osozawa, Y. Mohnai, Y. Nara
Japanese Journal of Applied Physics 56 105501-1 - 105501-7 2017.10
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Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition "jointly worked"
Yuki Nara, Syunki Narita, Hideki Nakazawa
117 7 - 10 2017.8
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Effects of source gases on the properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition"jointly worked"
H. Nakazawa, K. Magara, T. Takami, H. Ogasawara, Y. Enta, Y. Suzuki
Thin Solid Films 636 177 - 182 2017.8
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Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates”jointly worked"
S. Narita, K. Meguro, T. Takami, Y. Enta, H. Nakazawa
Journal of Crystal Growth 260 27 - 36 2017.2
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Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition”jointly worked"
H. Nakazawa, S. Okuno, K. Magara, K. Nakamura, S. Miura, Y. Enta
Japanese Journal of Applied Physics 55 125501-1 - 125501-9 2016.12
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Structural and electrical properties and current-voltage characterristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition”jointly worked"
M. Tsuchiya, K. Murakami, K. Magara, K. Nakamura, H. Ohashi, K. Tokuda, T. Takami, H. Ogasawara, Y. Enta, Y. Suzuki, S. Ando, H. Nakazawa
Japanese Journal of Applied Physics 55 065502-1 - 065502-6 2016.6
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Growth of epitaxial SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"
Syunki Narita, Kazuki Meguro, Hideki Nakazawa
115 11 - 14 2015.8
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Effects of substrate bias on properties of nitrogen-doped DLC films prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"
M. Tsuchiya, K. Murakami, T. Sato, T. Takami, Y. Enta, Hideki Nakazawa
115 7 - 10 2015.8
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Preparation and characterization of SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"
Kazuki Meguro, Syunki Narita, Hideki Nakazawa
115 1 - 5 2015.8
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Relaxation of Cs atomic polarization at surface coatings characterized by X-ray photoelectron spectroscopy"jointly worked"
K. Kushida, T. Niwano, T. Morita, T. Shimizu, K. Meguro, H. Nakazawa, A. Hatayama
Japanese Journal of Applied Physics 54 066401-1 - 066401-5 2015.6
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Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane"jointly worked"
H. Nakazawa, D. Suzuki, T. Narita, K. Meguro, M. Tsuchiya
Journal of Crystal Growth 418 52 - 56 2015.5
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Deposition of silicon-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition using an intermittent supply of organosilane"jointly worked"
H. Nakazawa, R. Kmata, S. Okuno
Dimoand and Related Materials 51 7 - 13 2015.1
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Effects of frequency of pulsed substrate bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition"jointly worked"
H. Nakazawa, R. Kmata, S. Miura, S. Okuno
Thin Solid Films 574 93 - 98 2015.1
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Characterization of nitrogen-doped DLC film prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"
Masato Tsuchiya, Kohei Magara, Kengo Tokuda, Hideki Nakazawa
114 1 - 5 2014.9
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SiC heteroepitaxial growth on an AlN layer formed on off-axis Si(001) substrates "jointly worked"
Kazuki Meguro, Tsugutada Narita, Toshihiro Uemura, Hideki Nakazawa
114 7 - 12 2014.9
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Formation of an interfacial buffer layer for 3C-SiC heteroepitaxy on AlN/Si substrates "jointly worked"
K. Meguro, T. Narita, K. Noto, H. Nakazawa
Materials Science Forum 778-780 251 - 254 2014.2
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Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum "jointly worked"
Y. Enta, T. Nagai, T. Yoshida, N. Ujiie, H. Nakazawa
Journal of Applied Physics 114 114104-1 - 114104-4 2013.9
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Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition "jointly worked"
H. Nakazawa, R. Kmata, S. Miura, S. Okuno
Thin Solid Films 539 134 - 138 2013.7
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Surface enhanced infrared absorption spectra on pulsed laser deposited silver island films "jointly worked"
H. Nakashima, Y. Sasaki, R. Osozawa, Y. Kon, H. Nakazawa, Y. Suzuki
Thin Solid Films 536 166 - 171 2013.6
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Effects of pulse bias on structure and properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition（共著）
H. Nakazawa, S. Miura, R. Kamata, S. Okuno, M. Suemitsu, T. Abe
Applied Surface Science 264 625 - 632 2013.1
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Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi（共著）
K. Yasui, Y. Anezaki, K. Sato, A. Kato, T. Kato, M. Suemitsu, Y. Narita, H. Nakazawa
ECS Transactions 50 171 - 177 2012.12
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Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE"jointly worked"
112 97 - 100 2012.10
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Formation of AlN layers on Si substrates and growth of 3C-SiC on AlN/Si substrates "jointly worked"
112 39 - 44 2012.10
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Heteroepitaxial growth of 3C-SiC on an AlN intermediate layer on Si(100) substrate "jointly worked"
112 5 - 10 2012.8
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Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics"jointly worked"
112 11 - 15 2012.8
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Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometallic Compounds "jointly worked"
Yutaka Anezaki, Takashi Otani, Haruki Goto, Takahiro Kato, Ariyuki Kato, Maki Suemitsu, Yuzuru Narita, Hideki Nakazawa, Kanji Yasui
Journal of The Surface Science Society of Japan 33 376 - 381 2012.7
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Hydrogen Effects of the Properties of Silicon/Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition（共著）
H. Nakazawa, S. Okuno, S. Miura, R. Kamata
Japanese Journal of Applied Physics 51 075801-1 - 075801-7 2012.7
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Characteristics of Silicon/Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition（共著）
H. Nakazawa, S. Miura, R. Kamata, S. Okuno, Y. Enta, M. Suemitsu, T. Abe
Japanese Journal of Applied Physics 51 015603-1 - 015603-7 2012.1
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Temperature dependence of the optical gap of diamond-like carbon films investigated by a piezoelectric photothermal spectroscopy（共著）
W. Ding, Y. Nakano, R. Yamamoto, K. Sakai, H. Nakazawa, A. Fukuyama, T. Ikari
Energy Procedia 10 66 - 70 2011.12
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SiC層中に埋め込まれたGe・SiCドットの発光特性（共著）
大谷孝史，姉崎 豊，浅野 翔，加藤有行，成田 克，中澤日出樹，加藤孝弘，安井寛治
電子情報通信学会技術報告 CPM111 15 - 20 2011.8
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レーザーアブレーション法によるDLC膜特性に及ぼすB、N添加の影響（共著）
毛内裕介，遅澤遼一，中澤日出樹
電子情報通信学会技術報告 CPM111 37 - 42 2011.8
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プラズマCVD法によるSiおよびN同時添加DLC膜特性に対する水素の影響（共著）
奥野さおり，三浦創史，鎌田亮輔，中澤日出樹
電子情報通信学会技術報告 CPM111 31 - 36 2011.8
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レーザーアブレーション法によるAlN成長のSi基板面方位依存性（共著）
鈴木大樹，熊谷知貴，中澤日出樹
電子情報通信学会技術報告 CPM111 1 - 6 2011.8
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Effects of hydrogen on the properties of Si-incorporated diamond-like carbon films prepared by pulsed laser deposition（共著）
H. Nakazawa, R. Osozawa,T. Okuzaki, N. Sato, M. Suemitsu, T. Abe
Diamond and Related Materials 20 485 - 491 2011.4
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Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure（共著）
H. Nakazawa, R. Osozawa, Y. Enta, M. Suemitsu
Dimoand and Related Materials 19 1387 - 1392 2010.11
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パルスモードホットメッシュCVD法によるGaN成長条件の最適化（共著）
永田一樹, 里本宗一, 片桐裕則, 神保和夫, 末光眞希, 遠藤哲郎, 伊藤 隆, 中澤日出樹, 成田 克, 安井寛治
電子情報通信学会技術報告 CPM110 55 - 58 2010.10
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レーザーアブレーション法によるSi基板上AlN薄膜の形成（共著）
中澤日出樹, 鈴木大樹, 遲澤遼一, 岡本 浩
電子情報通信学会技術報告 CPM110 39 - 44 2010.7
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Silicon thermal oxidation and its thermal deposition investigated by Si 2p core-level photoemission（共著）
Y. Enta, H. Nakazawa, S. Sato, H. Kato, Y. Sakisaka
Journal of Physics 235 012008-1 - 012008-6 2010.6
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Mechanical and tribological properties of boron, nitrogen-coincorporated diamond-like carbon films prepared by reactive radio-frequency magnetron Sputtering（共著）
H. Nakazawa, A. Sudoh, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita
Diamond and Related Materials 19 503 - 506 2010.5
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Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio- Frequency Plasma-Enhanced Chemical Va-por Deposition（共著）
H. Nakazawa, T. Kinoshita, Y. Kaimori, Y. Asai, M. Suemitsu, T. Abe, K. Yasui, T. Endoh, T. Itoh, Y. Narita, Y. Enta, M. Mashita
Japanese Journal of Applied Physics 48 116002-1 - 116002-8 2009.11
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有機シランを用いたプラズマCVD法によるダイヤモンドライクカーボン薄膜の膜特性評価（共著）
三浦創史,中澤日出樹,西崎圭太,末光眞希,安井寛治,伊藤 隆,遠藤哲郎,成田 克
電子情報通信学会技術報告 CPM109 13 - 18 2009.8
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間欠ガス供給を用いたホットメッシュCVD法によるSi上GaNエピタキシャル成長（共著）
齋藤 健,永田一樹,末光眞希,遠藤哲郎,伊藤 隆,中澤日出樹,成田 克,高田雅介,赤羽正志,安井寛治
電子情報通信学会技術報告 CPM109 61 - 66 2009.8
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原子状水素照射によるダイヤモンドライクカーボン膜の化学結合状態の変化（共著）
遲澤遼一,中澤日出樹,奥崎知秀,佐藤直之,遠田義晴,末光眞希
電子情報通信学会技術報告 CPM109 19 - 24 2009.8
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Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition （共著）
Y. Komae, K. Yasui, M. Suemitsu, T. Endoh, T. Ito, H. Nakazawa, Y. Narita, M. Takata, T. Akahane
Japanese Journal of Applied Physics 48 076509-1 - 076509-5 2009.7
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Atomic hydrogen etching of silicon-incorporated diamond- like carbon films prepared by pulsed laser deposition（共著）
H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita
Diamond and Related Materials 18 831 - 834 2009.6
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The growth of GaN films by alternate source gas supply hot-mesh CVD method （共著）
Y. Komae, T. Saitou, M. Suemitsu, T. Ito, T. Endoh, H. Nakazawa, Y. Narita, M. Takata, T. Akahane, K. Yasui
Thin Solid Films 517 3528 - 3531 2009.4
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Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate（共著）
Y. Miyamoto, H. Handa, E. Saito, A. Konno, Y. Narita, M. Suemitsu, H. Fukidome, T. Ito, K. Yasui, H. Nakazawa, T. Endoh
e-Journal of Surface Science and Nanotechnology 7 107 - 109 2009.2
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Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source（共著）
H. Nakazawa, Y. Asai, T. Kinoshita, M. Suemitsu, T. Abe, K. Yasui, T. Itoh, T. Endoh, Y. Narita, A. Konno, Y. Enta, M. Mashita
Japanese Journal of Applied Physics 47 8491 - 8497 2008.11
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パルスモードホットメッシュCVD法による窒化物半導体のエピタキシャル成長（共著）
小前泰彰, 齋藤 健, 末光眞希, 伊藤 隆, 遠藤哲郎, 中澤日出樹, 成田 克, 高田雅介, 安井寛治, 赤羽正志
電子情報通信学会技術報告 108 7 - 12 2008.10
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“Temperature oscillation” as a real-time monitoring of the growth of 3C–SiC on Si substrate（共著）
E. Saito, A. Konno, T. Ito, K. Yasui, H. Nakazawa, T. Endoh, Y. Narita, M. Suemitsu
Applied Surface Science 254 6235 - 6237 2008.7
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Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD （共著）
K. Tamura, Y. Kuroki, K. Yasui, M. Suemitsu, T. Itoh, T. Endoh, H. Nakazawa, Y. Narita, M. Takata, T. Akahane
Thin Solid Films 516 659 - 662 2008.1
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Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium coated tungsten mesh （共著）
Y. Fukada, K. Yasui, Y. Kuroki, M. Suemitsu, T. Itoh, T. Endoh, H. Nakazawa, Y. Narita, M. Takata, T. Akahane
Japanese Journal of Applied Physics 47 573 - 576 2008.1
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Effects of substrate bias voltage on structural, mechanical and tribological properties of diamond-like carbon films prepared plasma-enhanced chemical vapor deposition using methane and argon gases（共著）
H. Nakazawa, S. Kato, Y. Asai, M. Mashita
Japanese Journal of Applied Physics 47 231 - 236 2008.1
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Comparison of film properties between hydrogenated and unhydrogenated diamond-like carbon films prepared by radio-frequency magnetron sputtering "jointly worked"
H. Nakazawa, M. Kudo, M. Mashita
Japanese Journal of Applied Physics 46 7816 - 7823 2007.12
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ホットメッシュCVD法によるGaN成長-ルテニウムコーティッドタングステンメッシュの効果- （共著）
深田祐介，安部和貴，黒木雄一郎，末光眞希，伊藤 隆，成田 克，遠藤哲郎，中澤日出樹，高田雅介，安井寛治，赤羽正志
信学技報 2007.11
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Structural changes of diamond-like carbon films due to atomic hydrogen exposure during annealing "jointly worked"
H. Nakazawa, T. Kawabata, M. Kudo, M. Mashita
Applied Surface Science 253 4188 - 4196 2007.2
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Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane "jointly worked"
Y. Narita, A. Konno, H. Nakazawa, T. Itoh, K. Yasui, T. Endoh, M. Suemitsu
Japanese Journal of Applied Physics 46 L40 - L42 2007.1
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Low-temperature heteroepitaxial growth of 3C-SiC(111) on Si(110) substrate using monomethylsilane "jointly worked"
A. Konno, Y. Narita, T. Itoh,K. Yasui, H. Nakazawa, T. Endoh, M. Suemitsu
ECS Transactions 3 449 - 455 2006.11
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Effects of hydrogen on film properties of diamond-like carbon films prepared by reactive radio-frequency magnetron sputtering using hydrogen gas "jointly worked"
T. Mikami, H. Nakazawa,M. Kudo, M. Mashita
Thin Solid Films 488 87 - 92 2005.9
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Thermal effects on structural properties of diamond-like carbon films prepared by pulsed laser deposition "jointly worked"
H. Nakazawa, Y. Yamagata, M. Suemitsu, M. Mashita
Thin Solid Films 467 98 - 103 2004.11
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Adsorption kinetics of dimethylsilane at Si(001)
K. Senthil, H. Nakazawa, M. Suemitsu
Applied Surface Science 224 183 - 187 2004.3
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Adsorption and desorption kinetics of organosilanes at Si(001) surfaces "jointly worked"
K. Senthil, H. Nakazawa, M. Suemitsu
Japanese Journal of Applied Physics 42 6804 - 6808 2003.11
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Structure and Thermal Stability Bonddings of Diamond-Like Carbon (DLC) Films Prepared by RF Magnetron Sputtering "jointly worked"
M. Mikami, H. Nakazawa, Y. Enta, M. Suemitsu, M. Mashita
Journal of The Surface Science Society of Japan 24 411 - 416 2003.7
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Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates "jointly worked"
M. Mashita, T. Numata,H. Nakazawa, Y. Kajikawa,B. H. Koo, H. Makino,T. Yao
Japanese Journal of Applied Physics 42 L807 - L809 2003.7
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Mechanism of the Formation of Single-Domain SiC Films on Si Using Organo-Silane Gas "jointly worked"
H. Nakazawa, M. Suemitsu, M. Mashita
Journal of The Surface Science Society of Japan 24 429 - 433 2003.7
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Structure, Chemical bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering "jointly worked"
H. Nakazawa, T. Mikami,Y. Enta, M. Suemitsu,M. Mashita
Japanese Journal of Applied Physics 42 L676 - L679 2003.6
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Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer "jointly worked"
H. Nakazawa, M. Suemitsu
Journal of Applied Physics 93 5282 - 5286 2003.5
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Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organosilane buffer layer"jointly worked"
H. Nakazawa, M. Suemitsu
Materials Science Forum 389-393 351 - 354 2002
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Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: in situ observations and detailed modeling of the growth”jointly worked"
T. Murata, H. Nakazawa, Y. Tsukidate, M. Suemitsu
Applied Physics Letters 79 746 - 748 2001.8
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Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy”jointly worked"
H. Nakazawa, M. Suemitsu
Applied Physics Letters 79 755 - 757 2001.8
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Role of hydrogen preparing in the hydrogen desorption kinetics from Si(100)-2x1: effects of hydrogenation-gas and thermal history”jointly worked"
H. Nakazawa, M. Suemitsu, N. Miyamoto
Surface Science 465 177 - 185 2000.10
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Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed-desorption studies on H/, C2H2/, and MMS/Si(100) "jointly worked"
H. Nakazawa, M. Suemitsu
Applied Surface Science 162-163 139 - 145 2000.8
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Gas-Source MBE of SiC/Si using monomethylsilane"jointly worked"
H. Nakazawa, M. Suemitsu, S. Asami
Thin Solid Films 369 269 - 272 2000.7
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Formation of high quality SiC on Si(100) at 900ºC using monomethylsilane gas-source MBE
H. Nakazawa, M. Suemitsu
Materials Science Forum 338-342 269 - 272 2000
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Si系ガスソースMBEに関する研究
中澤日出樹
1999.3
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Higher-order desorption kinetics of hydrogen from silane/, disilane/, and D/Si(100)
H. Nakazawa, M. Suemitsu, S. Asami
Applied Surface Science 130-132 298 - 303 1998.6
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Effects of surface phosphorus on the kinetics of hydrogen desorption from silane adsorbed Si(100) surface at room temperatures
M. Suemitsu, Y. Tsukidate, H. Nakazawa, Y. Enta
Journal of Vacuum Sicence and Technology A 16 1772 - 1774 1998.5
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Effect of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
H. Nakazawa, M. Suemitsu, N. Miyamoto
Japanese Journal of Applied Physics Part2 36 L703 - L704 1997.6
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Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
M. Suemitsu, H. Nakazawa,T. Morita, N. Miyamoto
Japanese Journal of Applied Physics Part2 35 L625 - L628 1997.5
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A model for the temperature-dependent adsorption kinetics of SiH4 on Si(100)
M. Suemitsu, K.J. Kim, H. Nakazawa, N. Miyamoto
Applied Surface Science 107 81 - 84 1996.11
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H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE
H. Nakazawa, M. Suemitsu, N. Miyamoto
Surface Science 357-358 555 - 559 1996.6
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SiガスソースMBEにおける水素吸着脱離過程に関する研究
中澤日出樹
1996.3
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Temperature-programmed-desorption study of the process of atomic deuterium adsorption onto Si(100)2x1
M. Suemitsu, H. Nakazawa, N. Miyamoto
Applied Surface Science 82-83 449 - 453 1994.12