Papers - NAKAZAWA HIDEKI
-
Effects of O doping on Si- and N-doped diamond-like carbon films
Yuya Yamazaki, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa
123 ( 395 ) 38 - 41 2024.2
-
Photovoltaic and mechanical properties of boron carbide films prepared by magnetron sputtering
Tatsuya Nishida, Masayoshi Sato, Yoshiharu Enta, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa
Japanese Journal of Applied Physics 63 ( 1 ) 01SP38-1 - 01SP38-12 2024.1
-
Mechanical properties and heat resistance of Si- and N-doped diamond-like carbon films
Yuya Yamazaki, Yuya Sasaki, Hideki Nakazawa
123 ( 230 ) 33 - 36 2023.10
-
Fabrication of SiC/AlN multilayer structure on 3°off-axis Si(110) substrate and graphene formation thereon
Ryosuke Saito, Yuki Nara, Daiki Kasai, Haruto Koriyama, Yoshiharu Enta, Hideki Nakazawa
123 ( 142 ) 29 - 32 2023.7
-
Photovoltaic properties of boron carbide thin films prepared by magnetron sputtering using hydrogen gas
Tatsuya Nishida, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Hideki Nakazawa
122 ( 392 ) 35 - 38 2023.2
-
Hydrogen gas effects on the properties of boron carbide films prepared by magnetron sputtering
Nishida Tatsuya, Taniguchi Ryu, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hirokazu Fukidome, Hideki Nakazawa
122 ( 147 ) 14 - 17 2022.7
-
Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated, nitrogen-doped diamond-like carbon films
Hiroya Osanai, Kazuki Nakamura, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu, Hideki Nakazawa
Thin Solid Films 745 139100-1 - 139100-15 2022.3
-
Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Y. Sasaki, H. Osanai, Y. Ohtani, Y. Murono, M. Sato, Y. Kobayashi, Y. Enta, Y. Suzuki, H. Nakazawa
Diamond and Related Materials 123 108878-1 - 108878-12 2022.3
-
Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen
H. Nakazawa, K. Nakamura, H. Osanai, Y. Sasaki, H. Koriyama, Y. Kobayashi, Y. Enta, S. Suzuki, M. Suemitsu
Diamond and Related Materials 122 108809-1 - 108809-12 2022.2
-
Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
K. Nakamura, H. Ohashi, Y. Enta, Y. Kobayashi, Y. Suzuki, M. Suemitsu, H. Nakazawa
Thin Solid Films 736 138923-1 - 138923-11 2021.10
-
Effects of H2 and Ar dilution on the optical and electrical properties of Si and N doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa
121 ( 220 ) 23 - 28 2021.10
-
Hydrogen effects on the properties of BCN films deposited by magnetron sputtering
Ryu Taniguchi, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Hirokazu Fukidome, Hideki Nakazawa
120 ( 217 ) 23 - 26 2020.10
-
Effects of SiC low-temperature buffer layer on SiC epitaxial growth on AlN/Si(110) substrate
Hiroki Kasai, Yuki Nara, Hideki Nakazawa
120 ( 217 ) 7 - 10 2020.10
-
Influence of the terrace width of pentacene underlayers on the crystallinity of C60 overlayers
K. Nakata, H. Nakazawa, H. Okamoto, Y. Kobayashi
Thin Solid Films 692 137638-1 - 137638-5 2019.12
-
Annealing effects on the properties of nitrogen doped DLC films
H. Osanai, K. Nakamura, H. Koriyama, Y. Kobayashi, Y. Enta, Y. Suzuki, M. Suemitsu, H. Nakazawa
119 ( 217 ) 9 - 14 2019.11
-
Growth of 3C-SiC(111) on AlN/off-axis Si(111) hetero-structure and formation of epitaxial graphene thereon
S. Narita, Y. Nara, Y. Enta, H. Nakazawa
Japanese Journal of Applied Physics 58 SIIA16-1 - SIIA16-8 2019.8
-
Formation of an AlN intermediate layer on an off-axis Si(110) substrate and SiC heteroepitaxial growth thereon
Hideki Nakazawa, Yuki Nara, Hiroki Kasai
119 ( 181 ) 23 - 28 2019.8
-
Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of AlN/Si(110) substrate
Y. Nara, H. Nakazawa
Japanese Journal of Applied Physics 58 SIIA18-1 - SIIA18-6 2019.8
-
Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate
Yuki Nara, Hideki Nakazawa
JAPANESE JOURNAL OF APPLIED PHYSICS 58 ( SI ) SIIA18-1 - SIIA18-6 2019.8
-
Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon
Syunki Narita, Yuki Nara, Yoshiharu Enta, Hideki Nakazawa
JAPANESE JOURNAL OF APPLIED PHYSICS 58 ( SI ) SIIA16-1 - SIIA16-8 2019.8