Updated on 2022/03/29

写真a

 
KOBAYASHI Yasuyuki
 
Affiliation
Shizen Kagakukei(It is currently under consideration) Materials Science and Technology Section
Full-time staff
Graduate School of Science and Technology Research Division

Degree

  • 博士(工学)

Research Areas

  • Nanotechnology/Materials / Applied physical properties

Professional Memberships

  • 応用物理学会

Papers

  • Layered boron nitride as a release layer for mechanical transfer of GaN-based Devices

    Yasuyuki Kobayahi, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

    Nature   484   223 - 227   2012.4

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    Language:English   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition

    Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa

    Diamond & Related Materials   123   108878-01 - 108878-12   2022.1

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    Language:English   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated nitrogen-doped diamond-like carbon films

    Hiroya Osanai, Kazuki Nakamura, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu, Hideki Nakazawa

    745   139100-1 - 139100-15   2022.1

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    Language:English   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Influence of the terrace width of pentacene underlayers on the crystallinity of C60 overlayers

    Keiichi Nakata, Hideki Nakazawa, Hiroshi Okamoto, Yasuyuki Kobayashi

    Thin Solid Films   692   137638-1 - 137638-5   2019.10

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    Language:English   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

    Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto

    Applied Physics Letters   2014.11

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    Language:English   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Carrier Gas Dependent Evaporation Energy of GaN Estimated from Spiral Growth Rates in Selective-Area Metalorganice Vapor Phase Epitaxy

    Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu, Hideki Yamamoto

    Applied Physics Express   6   105501-1 - 105501-4   2013.9

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    Language:English   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • A vertical InGaN/GaN light-emitting diode fabricated on a flexible substrate by a mechanical transfer method using BN

    Toshiki Makimoto, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto

    Applied Physics Express   5   072102-1 - 072102-3   2012.6

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    Language:English   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

  • Extremely narrow violet photoluminescnece line from ultrathin InN single quantum well on step-free GaN surface

    Tetsuya Akasaka, Hideki Gotoh, Yasuyuki Kobayashi, Hideki Yamamoto

    Advanced Materials   24   4296 - 4300   2012.6

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    Language:English   Publishing type:Research paper (scientific journal)   Kind of work:Joint Work  

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Awards

  • The Best Oral Presentation Awards

    2022.03

  • 日本電信電話株式会社物性科学基礎研究所所長表彰業績賞

    2013.03

  • 日本電信電話株式会社先端技術総合研究所所長表彰研究開発賞

    2012.12

Social Activities

  • 弘前南高校課題研究指導

    2017.10

  • 弘前南高校課題研究指導

    2017.07

  • 横浜国立大学での非常勤講師

    2013.04 - 2013.09

  • 横浜国立大学での非常勤講師

    2012.04 - 2012.09

  • 横浜国立大学での非常勤講師

    2011.04 - 2011.09