Papers - ENTA YOSHIHARU
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Photovoltaic and mechanical properties of boron carbide films prepared by magnetron sputtering
Tatsuya Nishida, Masayoshi Sato, Yoshiharu Enta, Yushi Suzuki, Yasuyuki Kobayashi, Hideki Nakazawa
Japanese Journal of Applied Physics 63 01SP38-1 - 01SP38-12 2024.1
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3˚オフ 角 Si(110)基板上 への SiC/AlN多層構造 の 作製 およびグラフェンの形成
齋藤遼佑、奈良友奎、葛西大希、郡山春人、遠田義晴、中澤日出樹
電子情報通信学会技術研究報告 123 ( 142 ) 29 - 32 2023.7
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水素ガスを用いたマグネトロンスパッタ法による炭化ホウ素薄膜の光起電力特性
西田 竜也、佐藤 聖能、小林 康之、遠田 義晴、中澤 日出樹
電子情報通信学会技術研究報告 122 ( 392 ) 35 - 38 2023.2
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マグネトロンスパッタ法による炭化ホウ素薄膜の光起電力特性
西田 竜也、佐藤 聖能、小林 康之、遠田 義晴、中澤 日出樹
応用物理学会第７７回東北支部学術講演会予稿集 2022.12
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マグネトロンスパッタ法による炭化ホウ素膜特性への水素ガスの効果
西田 竜也、佐藤 聖能、小林 康之、遠田 義晴、中澤 日出樹
電子情報通信学会技術研究報告 122 ( 147 ) 14 - 17 2022.7
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Annealing effects on the properties of hydrogenated diamond-like carbon films doped with silicon and nitrogen
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu
122 108809-1 - 108809-12 2022.1
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Annealing-induced void formation in SiO2 layers on Si substrates: Influence of surface orientation and hydrocarbon exposure
Yoshiharu Enta, Yusuke Masuda, Kyota Akimoto
719 122029-1 - 122029-7 2022.1
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Influence of hydrogen gas flow ratio on the properties of silicon- and nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa
123 108878-1 - 108878-12 2022.1
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Effects of annealing temperature on the mechanical, optical, and electrical properties of hydrogenated, nitrogen-doped diamond-like carbon films
Hiroya Osanai, Kazuki Nakamura, Yuya Sasaki, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu, Hideki Nakazawa
745 139100-1 - 139100-15 2022.1
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Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
K. Nakamura, H. Ohashi, Y. Enta, Y. Kobayashi, Y. Suzuki, M. Suemitsu, H. Nakazawa
736 138923-1 - 138923-11 2021.10
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窒素を添加したDLC膜特性へのアニール効果
長内公哉，中村和樹，郡山春人，小林康之，遠田義晴，鈴木裕史，末光眞希，中澤日出樹
電子情報通信学会技術研究報告 119 ( 271 ) 9 - 14 2019.10
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Growth of 3C-SiC(111) on AlN/off-axis Si(110) hetero-structure and formation of epitaxial graphene thereon
Syunki Narita, Yuki Nara, Yoshiharu Enta, Hideki Nakazawa
Japanese Journal of Applied Physics 58 SIIA16-1 - SIIA16-8 2019.8
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Thermal stability of silicon and nitrogen doped DLC thin films
IEICE Technical Report 118 ( 276 ) 99 - 104 2018.10
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Si基板上SiO2薄膜の電子線照射による還元反応
藤森敬典，千田陽介，増田悠右，氏家夏樹，遠田義晴
電子情報通信学会技術研究報告 118 ( 179 ) 47 - 52 2018.8
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Zr系金属ガラス表面の元素組成と化学結合状態
郡山春人，藤森敬典，遠田義晴，富樫 望
電子情報通信学会技術研究報告 118 ( 179 ) 53 - 56 2018.8
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SiC/AlN/Si(110)基板上グラフェンの成長
中澤日出樹，成田舜基，奈良友奎，遠田義晴
電子情報通信学会技術研究報告 118 ( 179 ) 7 - 12 2018.8
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Si添加DLC薄膜への窒素添加の効果
中村和樹，大橋遼，横山大，田島圭一郎，遠藤則史，末光真希，遠田義晴，小林康之，鈴木裕史，中澤日出樹
電子情報通信学会技術研究報告 118 ( 179 ) 1 - 6 2018.8
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室温電子線照射によるSiO2膜／Si基板界面でのSi微細構造形成
遠田 義晴，増田 悠右，千田 陽介
第６５回応用物理学会春季学術講演会予稿集 2018.3
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Effects of Temperature and Pressure in Oxynitridation Kinetics on Si(100) with N2O Gas
Yoshiharu Enta, Makoto Wada, Mariko Arita, Takahiro Takami
Materials Science in Semiconductor Processing 70 63 - 67 2017.11
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希釈ガスに水素ガスを用いたプラズマ化学気相成長法によるSi/N共添加 DLC 薄膜の作製と評価
中村 和樹，大橋 遼, 横山 大, 田島 圭一郎, 遠藤 則史, 末光 眞希, 遠田 義晴, 小林 康之, 中澤 日出樹
応用物理学会第７２回東北支部学術講演会予稿集 2017.11
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Effects of nitrogen doping on the chemical bonding states and properties of silicon-doped diamond-like carbon films
Kazuki Nakamura, Haruka Ohashi, Tai Yokoyama, Kei-ichiro Tajima, Norifumi Endo, Maki Suemitsu, Yoshiharu Enta, Yasuyuki Kobayashi, Hideki Nakazawa
The 8th International Symposium on Surface Science 2017.10
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Effects of Organic-Compounds Doses on Silicon Fine Structures Formed in Voids on Silicon Dioxide Layers by Annealing in Vacuum
Yoshiharu Enta, Takayuki Nagai, Kano Ogawa, Taichi Yoshida, Shodai Osanai, Takahito Ogasawara, Yoshisumi Tsuchimoto, Chikashi Maita, Natsuki Ujiie, Hideki Nakazawa
The 8th International Symposium on Surface Science 2017.10
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Electron Beam Irradiation Effects on SiO2 Layer on Silicon Substrate at Room Temperature
Yusuke Masuda, Yoshiharu Enta
The 8th International Symposium on Surface Science 2017.10
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水素原子を用いた3C-SiC/Si基板上へのグラフェンの低温形成
荒畑宏樹，成田克，遠藤則史，末光眞希，遠田義晴，中澤日出樹
第７８回応用物理学会秋季学術講演会予稿集 2017.9
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シリコン基板上シリコン酸化膜の電子線照射による還元反応
増田悠右，遠田義晴
第７８回応用物理学会秋季学術講演会予稿集 2017.9
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Effects of source gases on the properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition
Hideki Nakazawa, Kohei Magara, Takahiro Takami, Haruka Ogasawara, Yoshiharu Enta, Yushi Suzuki
Thin Solid Films 636 177 - 182 2017.8
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真空蒸着法によるBi 媒介Ge ナノドットの形成過程評価
滝田健介，対馬和都，遠田義晴，俵毅彦，舘野功太，章国強，後藤秀樹，岡本浩
平成29年度電気関係学会東北支部連合大会予稿集 2017.8
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真空蒸着と低温アニールによるBi媒介Geナノドット形成-２
対馬 和都, 滝田 健介, 中澤 日出樹, 遠田 義晴, 俵 毅彦, 舘野 功太, 章 国強, 後藤 秀樹, 岡本 浩
第６４回応用物理学会春季学術講演会予稿集 2017.3
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真空蒸着と低温アニールによるBi媒介Geナノドット形成-１
滝田 健介, 対馬 和都, 遠田 義晴, 俵 毅彦, 舘野 功太, 章 国強, 後藤 秀樹, 池田 高之, 水野 誠一郎, 岡本 浩
第６４回応用物理学会春季学術講演会予稿集 2017.3
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Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates
S. Narita, K. Meguro, T. Takami, Y. Enta, H. Nakazawa
Journal of Crystal Growth 460 27 - 36 2017.2
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Activation energy of thermal desorption of silicon oxide layers on silicon substrates
Yoshiharu Enta, Shodai Osanai, Takahito Ogasawara
SURFACE SCIENCE 656 96 - 100 2017.2
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Activation Energy of Thermal Desorption of Silicon Oxide Layers on Silicon Substrates
Yoshiharu Enta, Shodai Osanai, Takahito Ogasawara
Surface Science 656 96 - 100 2017.1
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希釈ガスとしてH2を用いたプラズマCVD法によるDLC膜特性へのSiおよびN添加効果
中村 和樹，大橋 遼, 横山 大, 田島 圭一郎, 遠藤 則史, 末光 眞希, 遠田 義晴, 中澤 日出樹
応用物理学会第７１回東北支部学術講演会予稿集 2016.12
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Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition
Hideki Nakazawa, Saori Okuno, Kohei Magara, Kazuki Nakamura, Soushi Miura, Yoshiharu Enta
Japanese Journal of Applied Physics 55 125501-1 - 125501-9 2016.12
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希釈ガスに水素ガスを用いたプラズマ化学気相成長法によるSi/N共添加ダイヤモンドライクカーボンの膜特性
中村和樹、大橋遼、横山大、田島圭一郎、遠藤則史、末光眞希、遠田義晴、中澤日出樹
2016年真空・表面科学合同講演会 第36回表面科学学術講演会 第57回真空に関する連合講演会予稿集 2016.11
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希釈ガスに水素ガスを用いたプラズマCVD法によるN添加およびSi/N共添加DLC膜の特性比較
中村和樹、大橋遼、横山大、田島圭一郎、遠藤則史、末光眞希、遠田義晴、中澤日出樹
第30回ダイヤモンドシンポジウム予稿集 2016.11
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Silicon Fine Structures Formed by Thermal Desorption of Silicon Dioxide Layer in Vacuum
Yoshiharu Enta, Takayuki Nagai, Kano Ogawa, Taichi Yoshida, Shodai Osanai, Takahito Ogasawara, Yoshisumi Tsuchimoto, Chikashi Maita, Natsuki Ujiie, Hideki Nakazawa
Asia NANO 2016: Asian Conference on Nanoscience and Nanotechnology 2016.11
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希釈ガスとしてH2を用いたプラズマCVD法によるDLC膜特性へのSiおよびN添加効果
中村 和樹，大橋 遼, 横山 大, 田島 圭一郎, 遠藤 則史, 末光 眞希, 遠田 義晴, 中澤 日出樹
第７７回応用物理学会学術講演会予稿集 2016.9
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Effects of Temperature and Pressure in Oxynitridation Kinetics on Si(100) with N2O Gas
Yoshiharu Enta, Makoto Wada, Mariko Arita, and Takahiro Takami
7th International Symposium on Control of Semiconductor Interfaces ISCSI-VII 2016.6
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Structural and electrical properties and current–voltage characteristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition
Masato Tsuchiya, Kazuki Murakami, Kohei Magara, Kazuki Nakamura, Haruka Ohashi, Kengo Tokuda, Takahiro Takami, Haruka Ogasawara, Yoshiharu Enta, Yushi Suzuki, Satoshi Ando, and Hideki Nakazawa
Japanese Journal of Applied Physics 55 065502-1 - 065502-6 2016.5
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シリコン酸化膜熱脱離によるボイド内リング構造形成の雰囲気依存性
遠田 義晴，長内 翔大，小笠原 崇仁
第６３回応用物理学会春季学術講演会予稿集 2016.3
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Angle-Resolved and Resonant Photoemission Study of the Valence Bands of α-La(0001) on W(110)（共著）
Yoshiharu Enta, Osamu Morimoto, Hiroo Kato, and Yasuo Sakisaka
World Journal of Condensed Matter Physics 6 17 - 26 2016.2
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Ring structures formed inside voids in SiO2 layer on Si(100) during thermal decomposition（共著）
Yoshiharu Enta, Shodai Osanai, Taichi Yoshida
Japanese Journal of Applied Physics 55 028004-1 - 028004-3 2016.2
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Interfacial Structure of Oxynitride Layer on Si(100) with Plasma-Excited N2O
Y. Enta
International Journal of Applied and Natural Sciences 5 ( 1 ) 63 - 68 2016.1
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シリコン酸化膜のボイド状熱脱離とボイド内微細構造
遠田義晴，永井孝幸，吉田太祐，長内翔大，小笠原崇仁
応用物理学会東北支部 第７０回学術講演会要旨 2015.12
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シリコン酸窒化膜内殻準位異常シフトの解析
高見貴弘，和田誠，遠田義晴
応用物理学会東北支部 第７０回学術講演会要旨 2015.12
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PLD法による AlN/Si(110)上への SiC薄膜 の作製および グラフェンの形成
成田舜基， 目黒 一煕，高見貴弘，遠田義晴，中澤日出樹
応用物理学会東北支部 第７０回学術講演会要旨 2015.12
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Dry-Oxidation Rate of Si(100) Surface up to 2 nm-Oxide Thickness（共著）
Y. Enta, M. Arita, M. Wada
International Journal of Applied and Natural Sciences 4 ( 6 ) 51 - 56 2015.10
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気相熱励起N2Oガスを用いたシリコン熱酸窒化反応
高見 貴弘，遠田 義晴
第７６回応用物理学会学術講演会予稿集 2015.9
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Effect of surface adsorbates on chemical shifts of core-level spectra for silicon oxinitride films
Takahiro TAKAMI, Makoto WADA, Yoshiharu ENTA
IEICE Technical Report 115 ( 179 ) 71 - 74 2015.8
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Effects of substrate bias on properties of nitrogen-doped DLC films prepared by radio frequency plasma-enhanced chemical vapor deposition
Masato TSUCHIYA, Kazuki MURAKAMI, Tatsuhito SATO, Tahahiro TAKAMI, Yoshiharu ENTA, Hideki NAKAZAWA
IEICE Technical Report 115 ( 179 ) 7 - 10 2015.8
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Electrical and optical properties of nitrogen-doped DLC films prepared by plasma-enhanced chemical vapor deposition
M. Tsuchiya, K. Magara, K. Tokuda, Y. Enta, Y. Suzuki, T. Takami, H. Ogasawara, H. Nakazawa
The 9th International Conference on New Diamonds and Nano Carbons 2015 2015.5
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高周波プラズマ化学気相成長法による窒素添加DLC薄膜の電気的特性および光学的特性
土屋政人，真柄晃平，徳田健吾，遠田義晴，高見貴弘，中澤日出樹
応用物理学会第６９回東北支部学術講演会予稿集 2014.12
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シリコン酸化膜熱脱離時に形成される微細構造形成機構
長内 翔大,吉田 太祐,遠田 義晴
第７５回応用物理学会学術講演会予稿集 2014.9
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シリコン酸窒化膜の内殻準位化学シフトと表面モフォロジーの関連
高見貴弘, 和田誠, 遠田義晴
第７５回応用物理学会学術講演会予稿集 2014.9
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Segregation of Nitrogen in SiON layer on Si measured by angle-resolved photoelectron spectroscopy（共著）
MakotoWada, Mariko Arita, Yoshiharu Enta
Photon Factory Activity Report 2012 30B 2013.11
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Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum（共著）
Y. Enta, T. Nagai, T. Yoshida, N. Ujiie, H. Nakazawa
Journal of Applied Physics 114 114104-1 - 114104-04 2013.9
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Void and Nanostructure Formations during Thermal Decomposition of 20-nm-Thick Silicon Oxide Layer on Si(100)（共著）
Yoshiharu Enta, Kano Ogawa, Takayuki Nagai
Japanese Journal of Applied Physics 52 031303-1 - 031303-4 2013.3
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Precise control of epitaxy of graphene by microfabricating SiC substrate（共著）
H. Fukidome, Y. Kawai, Th. Seyller, M. Kotsugi, H. Handa, T. Ohkouchi, H. Miyashita, T. Ide, Y. Enta, T. Kinoshita, M. Suemitsu
Applied Physics Letters 101 041605 2012.7
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Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates（共著）
Takayuki Ide, Yusuke Kawai1, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu
Japanese Journal of Applied Physics 51 06FD02 2012.6
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Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition（共著)
H. Nakazawa, S. Miura, R. Kamata, S. Okuno, Y. Enta, M. Suemitsu, T Abe
Japanese Journal of Applied Physics 51 015603 2012.1
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Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
Hideki Nakazawa, Soushi Miura, Ryosuke Kamata, Saori Okuno, Yoshiharu Enta, Maki Suemitsu, Toshimi Abe
JAPANESE JOURNAL OF APPLIED PHYSICS 51 ( 1 ) 2012.1
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Initial thermal oxidation of Si(100) investigated by Si 2p core-level photoemission（共著）
Yoshiharu ENTA, Hideki NAKAZAWA, Hiroo KATO, Yasuo SAKISAKA
Photon Factory Activity Report 2010 28B 57 - 57 2011.11
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Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si（共著）
Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito and Maki Suemitsu
Applied Physics Express 4 115104 2011.11
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Control of Epitaxy of Graphene by Crystallographic Orientation of Si Substrate toward Device Applications（共著）
Hirokazu Fukidome, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Hiroyuki Handa, Hyun-Chul Kang, Hiromi Karasawa, Tetsuya Suemitsu, Taiichi Otsuji, Yoshiharu Enta, Maki Suemitsu, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita
Journal of Materials Chemistry 21 17242 - 17248 2011.10
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シリコン酸化膜の不均一な熱分解（共著）
遠田義晴，小川可乃，永井孝幸
電子情報通信学会技術研究報告書 111 ( 176 ) 61 - 64 2011.8
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Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface（共著）
Kei Imaizumi, Hiroyuki Hanada, Ryota Takahashi, Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka, Akitaka Yoshigoe, Maki Suemitsu
Japanese Journal of Applied Physics 50 070105 2011.7
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Effect of Interfacial Strain in Wet Oxidation Kinetics on Si(100)（共著）
Bongjin Simon Mun, Massimiliano Rossi, Yoshiharu Enta
Journal of Korean Physical Society 58 920 - 923 2011.4
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Thermal desorption of silicon oxide layer on Si(100) investigated by Si 2p core-level photoemission（共著）
Yoshiharu ENTA, Hideki NAKAZAWA, Sumiya SATO, Hiroo KATO, Yasuo SAKISAKA
Photon Factory Activity Report 2009 27B 67 - 67 2010.11
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Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure（共著）
H. Nakazawa, R. Osozawa, Y. Enta, M. Suemitsu
Diamond and Related Materials 19 1387 - 1392 2010.11
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Changes of chemical bonding of diamond-like carbon films by atomic-hydrogen exposure（共著）
Hideki NAKAZAWA, Ryoichi OSAZAWA
Photon Factory Activity Report 2009 27B 66 - 66 2010.11
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Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure
H. Nakazawa, R. Osozawa, Y. Enta, M. Suemitsu
DIAMOND AND RELATED MATERIALS 19 ( 11 ) 1387 - 1392 2010.11
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Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission（共著）
Y. Enta, H. Nakazawa, S. Sato, H. Kato, Y. Sakisaka
Journal of Physics: Conference Series 235 012008 2010.6
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Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition (共著)
Hideki NAKAZAWA, Takeshi KINOSHITA, Yuhta KAIMORI, Yuhki ASAI, Maki SUEMITSU1, Toshimi ABE, Kanji YASUI, Tetsuo ENDOH, Takashi ITOH, Yuzuru NARITA, Yoshiharu ENTA, Masao MASHITA
Japanese Journal of Applied Physics 48 116002 2009.11
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Angle-Resolved Photoemission from the Valence-Bands of Ce(111)（共著）
Osamu MORIMOTO, Hiroo KATO, Yoshiharu ENTA, Yasuo SAKISAKA
Photon Factory Activity Report 2008 26B 79 - 79 2009.11
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Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition
H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita
DIAMOND AND RELATED MATERIALS 18 ( 5-8 ) 831 - 834 2009.5
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Photoemission from the valence bands of Ce(111) on W(110) (共著)
O. Morimoto, H. Kato, Y. Enta, Y. Sakisaka
Surface Science 603 ( 13 ) 2145 - 2151 2009.4
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Atomic Hydrogen Etching of Silicon-Incorporated Diamond-Like Carbon Films Prepared by Pulsed Laser Deposition (共著)
H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Ito, T. Endo, Y. Narita, M. Mashita
Diamond & Related Materials 18 831 - 834 2009.1
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Initial oxidation of Si(110) as studied by real-time synchrotron-radiation x-ray photomission spectroscopy (共著)
M. Suemitsu, Y. Yamamoto, H. Togashi, Y. Enta, A. Yoshigoe, Y. Teraoka
Journal of Vacuum Science and Technology B27 547 - 550 2009.1
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Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source (共著)
Hideki Nakazawa, Yuhki Asai, Takeshi Kinoshita, Maki Suemitsu, Toshimi Abe, Kanji Yasui, Takashi Itoh, Tetsuo Endoh, Yuzuru Narita, Atsushi Konno, Yoshiharu Enta, Masao Mashita
Japanese Journal of Applied Physics 47 ( 11 ) 8491 - 8497 2008.11
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In-Situ Observation of Wet Oxidation Kinetics on Si(100) via Ambient Pressure X-ray Photoemission Spectroscopy（共著）
M. Rossi他
Journal of Applied Physics 103 044104 2008.2
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Real-Time Observation of the Dry Oxidation of the Si(100) Surface with Ambient Pressure X-ray Photoelectron Spectroscopy（共著）
Y. Enta他
Applied Physics letters 92 012110 2008.1
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Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surfaces by O1s Photoemission Spectroscopy Using Synchrotron Radiation（共著）
M. Suemitsu他
Japanese Journal of Applied Physics 46 1888 - 1890 2007.4
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Real-Time Observation of Initial Thermal Oxidation on Si(110)-16x2 Surface by Photoemission Spectroscopy（共著）
M. Suemitsu他
ECS Transactions 3 311 - 316 2006.11
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ALS in Berkeley 滞在雑記
遠田義晴
Photon Factory News 24 ( 2 ) 55 - 57 2006.8
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Integrated Description for Random-Adsorption and 2D-Island Growth Kinetics in Thin Film Growth: Autocatalytic-Reaction Model and Kinetic Monte-Carlo Simulation（共著）
Hideaki Togashi , Yoshiharu Enta, Maki Suemitsu
Applied Surface Science 252 5900 - 5906 2006.6
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Oxynitridation of Si(100) surface with thermally excited N2O gas（共著）
Y. Enta, K. Suto, S. Takeda, H. Kato, Y. Sakisaka
Thin Solid Films 500 129 - 132 2006.4
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Si 2p core-level spectra for oxynitride on Si(100) with plasma-excited N2O（共著）
Y. Enta, K. Suto, H. Kato, Y. Sakisaka
Photon Factory Activity Report 22 ( B ) 79 - 79 2005.11
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Soft X-ray fluorescence spectroscopy of FexCo1-xSi（共著）
N. Nakajima他
Photon Factory Activity Report 22 ( B ) 102 - 102 2005.11
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XPS study of the initial oxidation stage on HF-treated Si(100) surfaces（共著）
F. Hirose他
Photon Factory Activity Report 22 ( B ) 82 - 82 2005.11
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N2Oガス気相熱励起法によるシリコン酸窒化膜の形成（共著）
遠田義晴,武田創太郎
電子情報通信学会論文誌 J87-C 590 - 591 2004.7
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Si初期酸窒化のリアルタイム光電子分光
遠田義晴
ナノテクノロジーと高分解能電子分光PF研究会プロシーディング 2003.12
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Structure and Thermal Stability of the Chemical Bondings of Diamond-Like Carbon (DLC) Films Prepared by RF Magnetron Sputtering"jointly worked"
T. Mikami, H. Nakazawa, Y. Enta, M. Suemitsu, M. Mashita
Journal of The Surface Science Society of Japan 24 411 - 416 2003.7
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Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering（共著）
H. Nakazawa, T. Mikami, Y. Enta, M. Suemitsu, M. Mashita
Japanese Journal of Applied Physics 42 L676 - L679 2003.6