Papers - NAKAZAWA HIDEKI
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Effects of substrate bias voltage on structural, mechanical and tribological properties of diamond-like carbon films prepared plasma-enhanced chemical vapor deposition using methane and argon gases（共著）
H. Nakazawa, S. Kato, Y. Asai, M. Mashita
Japanese Journal of Applied Physics 47 231 - 236 2008.1
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Comparison of film properties between hydrogenated and unhydrogenated diamond-like carbon films prepared by radio-frequency magnetron sputtering "jointly worked"
H. Nakazawa, M. Kudo, M. Mashita
Japanese Journal of Applied Physics 46 7816 - 7823 2007.12
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ホットメッシュCVD法によるGaN成長-ルテニウムコーティッドタングステンメッシュの効果- （共著）
深田祐介，安部和貴，黒木雄一郎，末光眞希，伊藤 隆，成田 克，遠藤哲郎，中澤日出樹，高田雅介，安井寛治，赤羽正志
信学技報 2007.11
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Structural changes of diamond-like carbon films due to atomic hydrogen exposure during annealing "jointly worked"
H. Nakazawa, T. Kawabata, M. Kudo, M. Mashita
Applied Surface Science 253 4188 - 4196 2007.2
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Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane "jointly worked"
Y. Narita, A. Konno, H. Nakazawa, T. Itoh, K. Yasui, T. Endoh, M. Suemitsu
Japanese Journal of Applied Physics 46 L40 - L42 2007.1
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Low-temperature heteroepitaxial growth of 3C-SiC(111) on Si(110) substrate using monomethylsilane "jointly worked"
A. Konno, Y. Narita, T. Itoh,K. Yasui, H. Nakazawa, T. Endoh, M. Suemitsu
ECS Transactions 3 449 - 455 2006.11
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Effects of hydrogen on film properties of diamond-like carbon films prepared by reactive radio-frequency magnetron sputtering using hydrogen gas "jointly worked"
T. Mikami, H. Nakazawa,M. Kudo, M. Mashita
Thin Solid Films 488 87 - 92 2005.9
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Thermal effects on structural properties of diamond-like carbon films prepared by pulsed laser deposition "jointly worked"
H. Nakazawa, Y. Yamagata, M. Suemitsu, M. Mashita
Thin Solid Films 467 98 - 103 2004.11
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Adsorption kinetics of dimethylsilane at Si(001)
K. Senthil, H. Nakazawa, M. Suemitsu
Applied Surface Science 224 183 - 187 2004.3
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Adsorption and desorption kinetics of organosilanes at Si(001) surfaces "jointly worked"
K. Senthil, H. Nakazawa, M. Suemitsu
Japanese Journal of Applied Physics 42 6804 - 6808 2003.11
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Structure and Thermal Stability Bonddings of Diamond-Like Carbon (DLC) Films Prepared by RF Magnetron Sputtering "jointly worked"
M. Mikami, H. Nakazawa, Y. Enta, M. Suemitsu, M. Mashita
Journal of The Surface Science Society of Japan 24 411 - 416 2003.7
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Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates "jointly worked"
M. Mashita, T. Numata,H. Nakazawa, Y. Kajikawa,B. H. Koo, H. Makino,T. Yao
Japanese Journal of Applied Physics 42 L807 - L809 2003.7
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Mechanism of the Formation of Single-Domain SiC Films on Si Using Organo-Silane Gas "jointly worked"
H. Nakazawa, M. Suemitsu, M. Mashita
Journal of The Surface Science Society of Japan 24 429 - 433 2003.7
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Structure, Chemical bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering "jointly worked"
H. Nakazawa, T. Mikami,Y. Enta, M. Suemitsu,M. Mashita
Japanese Journal of Applied Physics 42 L676 - L679 2003.6
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Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer "jointly worked"
H. Nakazawa, M. Suemitsu
Journal of Applied Physics 93 5282 - 5286 2003.5
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Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organosilane buffer layer"jointly worked"
H. Nakazawa, M. Suemitsu
Materials Science Forum 389-393 351 - 354 2002
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Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: in situ observations and detailed modeling of the growth”jointly worked"
T. Murata, H. Nakazawa, Y. Tsukidate, M. Suemitsu
Applied Physics Letters 79 746 - 748 2001.8
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Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy”jointly worked"
H. Nakazawa, M. Suemitsu
Applied Physics Letters 79 755 - 757 2001.8
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Role of hydrogen preparing in the hydrogen desorption kinetics from Si(100)-2x1: effects of hydrogenation-gas and thermal history”jointly worked"
H. Nakazawa, M. Suemitsu, N. Miyamoto
Surface Science 465 177 - 185 2000.10
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Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed-desorption studies on H/, C2H2/, and MMS/Si(100) "jointly worked"
H. Nakazawa, M. Suemitsu
Applied Surface Science 162-163 139 - 145 2000.8