Papers - NAKAZAWA HIDEKI
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Effects of frequency of pulsed substrate bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition"jointly worked"
H. Nakazawa, R. Kmata, S. Miura, S. Okuno
Thin Solid Films 574 93 - 98 2015.1
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Characterization of nitrogen-doped DLC film prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"
Masato Tsuchiya, Kohei Magara, Kengo Tokuda, Hideki Nakazawa
114 1 - 5 2014.9
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SiC heteroepitaxial growth on an AlN layer formed on off-axis Si(001) substrates "jointly worked"
Kazuki Meguro, Tsugutada Narita, Toshihiro Uemura, Hideki Nakazawa
114 7 - 12 2014.9
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Formation of an interfacial buffer layer for 3C-SiC heteroepitaxy on AlN/Si substrates "jointly worked"
K. Meguro, T. Narita, K. Noto, H. Nakazawa
Materials Science Forum 778-780 251 - 254 2014.2
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Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum "jointly worked"
Y. Enta, T. Nagai, T. Yoshida, N. Ujiie, H. Nakazawa
Journal of Applied Physics 114 114104-1 - 114104-4 2013.9
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Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition "jointly worked"
H. Nakazawa, R. Kmata, S. Miura, S. Okuno
Thin Solid Films 539 134 - 138 2013.7
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Surface enhanced infrared absorption spectra on pulsed laser deposited silver island films "jointly worked"
H. Nakashima, Y. Sasaki, R. Osozawa, Y. Kon, H. Nakazawa, Y. Suzuki
Thin Solid Films 536 166 - 171 2013.6
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Effects of pulse bias on structure and properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition（共著）
H. Nakazawa, S. Miura, R. Kamata, S. Okuno, M. Suemitsu, T. Abe
Applied Surface Science 264 625 - 632 2013.1
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Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi（共著）
K. Yasui, Y. Anezaki, K. Sato, A. Kato, T. Kato, M. Suemitsu, Y. Narita, H. Nakazawa
ECS Transactions 50 171 - 177 2012.12
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Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE"jointly worked"
112 97 - 100 2012.10
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Formation of AlN layers on Si substrates and growth of 3C-SiC on AlN/Si substrates "jointly worked"
112 39 - 44 2012.10
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Heteroepitaxial growth of 3C-SiC on an AlN intermediate layer on Si(100) substrate "jointly worked"
112 5 - 10 2012.8
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Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics"jointly worked"
112 11 - 15 2012.8
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Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometallic Compounds "jointly worked"
Yutaka Anezaki, Takashi Otani, Haruki Goto, Takahiro Kato, Ariyuki Kato, Maki Suemitsu, Yuzuru Narita, Hideki Nakazawa, Kanji Yasui
Journal of The Surface Science Society of Japan 33 376 - 381 2012.7
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Hydrogen Effects of the Properties of Silicon/Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition（共著）
H. Nakazawa, S. Okuno, S. Miura, R. Kamata
Japanese Journal of Applied Physics 51 075801-1 - 075801-7 2012.7
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Characteristics of Silicon/Nitrogen-Coincorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition（共著）
H. Nakazawa, S. Miura, R. Kamata, S. Okuno, Y. Enta, M. Suemitsu, T. Abe
Japanese Journal of Applied Physics 51 015603-1 - 015603-7 2012.1
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Temperature dependence of the optical gap of diamond-like carbon films investigated by a piezoelectric photothermal spectroscopy（共著）
W. Ding, Y. Nakano, R. Yamamoto, K. Sakai, H. Nakazawa, A. Fukuyama, T. Ikari
Energy Procedia 10 66 - 70 2011.12
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SiC層中に埋め込まれたGe・SiCドットの発光特性（共著）
大谷孝史，姉崎 豊，浅野 翔，加藤有行，成田 克，中澤日出樹，加藤孝弘，安井寛治
電子情報通信学会技術報告 CPM111 15 - 20 2011.8
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レーザーアブレーション法によるDLC膜特性に及ぼすB、N添加の影響（共著）
毛内裕介，遅澤遼一，中澤日出樹
電子情報通信学会技術報告 CPM111 37 - 42 2011.8
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プラズマCVD法によるSiおよびN同時添加DLC膜特性に対する水素の影響（共著）
奥野さおり，三浦創史，鎌田亮輔，中澤日出樹
電子情報通信学会技術報告 CPM111 31 - 36 2011.8