論文 - 中澤 日出樹
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高周波マグネトロンスパッタリング法により作製したダイヤモンドライクカーボン(DLC)膜の構造と熱的安定性（共著）
三上尊正、中澤日出樹、遠田義晴、 末光眞希、真下正夫
表面科学 24 411 - 416 2003年07月
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Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates "jointly worked"
M. Mashita, T. Numata,H. Nakazawa, Y. Kajikawa,B. H. Koo, H. Makino,T. Yao
Japanese Journal of Applied Physics 42 L807 - L809 2003年07月
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有機シランガスを用いたSi基板上シングルドメインSiC薄膜の形成メカニズム（共著）
中澤日出樹, 末光眞希, 真下正夫
表面科学 24 429 - 433 2003年07月
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Structure, Chemical bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering "jointly worked"
H. Nakazawa, T. Mikami,Y. Enta, M. Suemitsu,M. Mashita
Japanese Journal of Applied Physics 42 L676 - L679 2003年06月
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Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer "jointly worked"
H. Nakazawa, M. Suemitsu
Journal of Applied Physics 93 5282 - 5286 2003年05月
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Formation of extremely thin, quasi-single-domain 3C-SiC film on resistively heated on-axis Si(001) substrate using organosilane buffer layer"jointly worked"
H. Nakazawa, M. Suemitsu
Materials Science Forum 389-393 351 - 354 2002年
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Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: in situ observations and detailed modeling of the growth”jointly worked"
T. Murata, H. Nakazawa, Y. Tsukidate, M. Suemitsu
Applied Physics Letters 79 746 - 748 2001年08月
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Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy”jointly worked"
H. Nakazawa, M. Suemitsu
Applied Physics Letters 79 755 - 757 2001年08月
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Role of hydrogen preparing in the hydrogen desorption kinetics from Si(100)-2x1: effects of hydrogenation-gas and thermal history”jointly worked"
H. Nakazawa, M. Suemitsu, N. Miyamoto
Surface Science 465 177 - 185 2000年10月
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Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed-desorption studies on H/, C2H2/, and MMS/Si(100) "jointly worked"
H. Nakazawa, M. Suemitsu
Applied Surface Science 162-163 139 - 145 2000年08月
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Gas-Source MBE of SiC/Si using monomethylsilane"jointly worked"
H. Nakazawa, M. Suemitsu, S. Asami
Thin Solid Films 369 269 - 272 2000年07月
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Formation of high quality SiC on Si(100) at 900ºC using monomethylsilane gas-source MBE
H. Nakazawa, M. Suemitsu
Materials Science Forum 338-342 269 - 272 2000年
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Si系ガスソースMBEに関する研究
中澤日出樹
1999年03月
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Higher-order desorption kinetics of hydrogen from silane/, disilane/, and D/Si(100)
H. Nakazawa, M. Suemitsu, S. Asami
Applied Surface Science 130-132 298 - 303 1998年06月
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Effects of surface phosphorus on the kinetics of hydrogen desorption from silane adsorbed Si(100) surface at room temperatures
M. Suemitsu, Y. Tsukidate, H. Nakazawa, Y. Enta
Journal of Vacuum Sicence and Technology A 16 1772 - 1774 1998年05月
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Effect of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
H. Nakazawa, M. Suemitsu, N. Miyamoto
Japanese Journal of Applied Physics Part2 36 L703 - L704 1997年06月
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Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
M. Suemitsu, H. Nakazawa,T. Morita, N. Miyamoto
Japanese Journal of Applied Physics Part2 35 L625 - L628 1997年05月
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A model for the temperature-dependent adsorption kinetics of SiH4 on Si(100)
M. Suemitsu, K.J. Kim, H. Nakazawa, N. Miyamoto
Applied Surface Science 107 81 - 84 1996年11月
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H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE
H. Nakazawa, M. Suemitsu, N. Miyamoto
Surface Science 357-358 555 - 559 1996年06月
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SiガスソースMBEにおける水素吸着脱離過程に関する研究
中澤日出樹
1996年03月