Papers - NAKAZAWA HIDEKI
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Effects of H2 and Ar dilution on the optical and electrical properties of Si and N doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
Yuya Sasaki, Hiroya Osanai, Yusuke Ohtani, Yuta Murono, Masayoshi Sato, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Hideki Nakazawa
121 ( 220 ) 23 - 28 2021.10
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Effects of silicon doping on the chemical bonding states and properties of nitrogen-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition
K. Nakamura, H. Ohashi, Y. Enta, Y. Kobayashi, Y. Suzuki, M. Suemitsu, H. Nakazawa
Thin Solid Films 736 138923-1 - 138923-11 2021.10
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Hydrogen effects on the properties of BCN films deposited by magnetron sputtering
Ryu Taniguchi, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Hirokazu Fukidome, Hideki Nakazawa
120 ( 217 ) 23 - 26 2020.10
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Effects of SiC low-temperature buffer layer on SiC epitaxial growth on AlN/Si(110) substrate
Hiroki Kasai, Yuki Nara, Hideki Nakazawa
120 ( 217 ) 7 - 10 2020.10
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Influence of the terrace width of pentacene underlayers on the crystallinity of C60 overlayers
K. Nakata, H. Nakazawa, H. Okamoto, Y. Kobayashi
Thin Solid Films 692 137638-1 - 137638-5 2019.12
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Annealing effects on the properties of nitrogen doped DLC films
H. Osanai, K. Nakamura, H. Koriyama, Y. Kobayashi, Y. Enta, Y. Suzuki, M. Suemitsu, H. Nakazawa
119 ( 217 ) 9 - 14 2019.11
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Growth of 3C-SiC(111) on AlN/off-axis Si(111) hetero-structure and formation of epitaxial graphene thereon
S. Narita, Y. Nara, Y. Enta, H. Nakazawa
Japanese Journal of Applied Physics 58 SIIA16-1 - SIIA16-8 2019.8
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Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of AlN/Si(110) substrate
Y. Nara, H. Nakazawa
Japanese Journal of Applied Physics 58 SIIA18-1 - SIIA18-6 2019.8
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Formation of an AlN intermediate layer on an off-axis Si(110) substrate and SiC heteroepitaxial growth thereon
Hideki Nakazawa, Yuki Nara, Hiroki Kasai
119 ( 181 ) 23 - 28 2019.8
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Effect of a SiC seed layer grown at different temperatures on SiC film deposition on top of an AlN/Si(110) substrate
Yuki Nara, Hideki Nakazawa
JAPANESE JOURNAL OF APPLIED PHYSICS 58 ( SI ) SIIA18-1 - SIIA18-6 2019.8
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Study on the formation mechanism of bismuth -mediated Ge nanodots fabricated by vacuum evaporation
K. Tsushima, K. Takita, H. Nakazawa, T. Tawara, K. Tateno, G. Zhang, H. Gotoh, H. Okamoto
Japanese Journal of Applied Physics 58 SDDG-1 - SDDG-5 2019.6
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Preparation and characterization of carbon related thin films
Hideki Nakazawa
118 ( 461 ) 37 - 40 2019.2
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Thermal stability of silicon and nitrogen doped DLC thin films
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu
118 ( 179 ) 99 - 104 2018.10
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Effects of nitrogen doping on the properties of Si-doped DLC films
Kazuki Nakamura, Haruka Oohashi, Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu, Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa
118 ( 179 ) 1 - 6 2018.8
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Growth of graphene on SiC/AlN/Si(110) substrates
Hideki Nakazawa, Syunki Narita, Yuki Nara, Yoshiharu Enta
118 ( 179 ) 7 - 12 2018.8
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Investigation of formation conditions of SiC buffer layers for SiC/SiC buffer layer/AlN/Si(110) multilayer structures
Yuki Nara, Asahi Kudo, Hideki Nakazawa
118 ( 179 ) 13 - 16 2018.8
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Study on the formation mechanism of Bi-mediated Ge nanodots fabricated by vacuum evaporation
Kazuto Tsushima, Kensuke Takita, Hideki Nakazawa, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh, Takayuki Ikeda, Seiichiro Mizuno, Hiroshi Okamoto
118 ( 179 ) 21 - 24 2018.8
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Impacts of substrate bias and dilution gas on the properties of Si-incorporated diamond-like carbon films by plasma deposition using organosilane as a Si source
H. Nakazawa, S. Miura, K. Nakamura, Y. Nara
Thin Solid Films 654 38 - 48 2018.5
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Synthesis of boron/nitrogen-incorporated diamond-like carbon films by pulsed laser deposition using nitrogen gas and a boron-containing graphite target”jointly worked"
H. Nakazawa, R. Osozawa, Y. Mohnai, Y. Nara
Japanese Journal of Applied Physics 56 105501-1 - 105501-7 2017.10
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Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition "jointly worked"
Yuki Nara, Syunki Narita, Hideki Nakazawa
117 7 - 10 2017.8