Papers - NAKAZAWA HIDEKI
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Study on the formation mechanism of bismuth -mediated Ge nanodots fabricated by vacuum evaporation
K. Tsushima, K. Takita, H. Nakazawa, T. Tawara, K. Tateno, G. Zhang, H. Gotoh, H. Okamoto
Japanese Journal of Applied Physics 58 SDDG-1 - SDDG-5 2019.6
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Preparation and characterization of carbon related thin films
Hideki Nakazawa
118 ( 461 ) 37 - 40 2019.2
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Thermal stability of silicon and nitrogen doped DLC thin films
Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki, Maki Suemitsu
118 ( 179 ) 99 - 104 2018.10
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Effects of nitrogen doping on the properties of Si-doped DLC films
Kazuki Nakamura, Haruka Oohashi, Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu, Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa
118 ( 179 ) 1 - 6 2018.8
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Growth of graphene on SiC/AlN/Si(110) substrates
Hideki Nakazawa, Syunki Narita, Yuki Nara, Yoshiharu Enta
118 ( 179 ) 7 - 12 2018.8
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Investigation of formation conditions of SiC buffer layers for SiC/SiC buffer layer/AlN/Si(110) multilayer structures
Yuki Nara, Asahi Kudo, Hideki Nakazawa
118 ( 179 ) 13 - 16 2018.8
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Study on the formation mechanism of Bi-mediated Ge nanodots fabricated by vacuum evaporation
Kazuto Tsushima, Kensuke Takita, Hideki Nakazawa, Takehiko Tawara, Kouta Tateno, Guoqiang Zhang, Hideki Gotoh, Takayuki Ikeda, Seiichiro Mizuno, Hiroshi Okamoto
118 ( 179 ) 21 - 24 2018.8
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Impacts of substrate bias and dilution gas on the properties of Si-incorporated diamond-like carbon films by plasma deposition using organosilane as a Si source
H. Nakazawa, S. Miura, K. Nakamura, Y. Nara
Thin Solid Films 654 38 - 48 2018.5
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Synthesis of boron/nitrogen-incorporated diamond-like carbon films by pulsed laser deposition using nitrogen gas and a boron-containing graphite target”jointly worked"
H. Nakazawa, R. Osozawa, Y. Mohnai, Y. Nara
Japanese Journal of Applied Physics 56 105501-1 - 105501-7 2017.10
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Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition "jointly worked"
Yuki Nara, Syunki Narita, Hideki Nakazawa
117 7 - 10 2017.8
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Effects of source gases on the properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition"jointly worked"
H. Nakazawa, K. Magara, T. Takami, H. Ogasawara, Y. Enta, Y. Suzuki
Thin Solid Films 636 177 - 182 2017.8
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Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates”jointly worked"
S. Narita, K. Meguro, T. Takami, Y. Enta, H. Nakazawa
Journal of Crystal Growth 260 27 - 36 2017.2
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Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition”jointly worked"
H. Nakazawa, S. Okuno, K. Magara, K. Nakamura, S. Miura, Y. Enta
Japanese Journal of Applied Physics 55 125501-1 - 125501-9 2016.12
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Structural and electrical properties and current-voltage characterristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition”jointly worked"
M. Tsuchiya, K. Murakami, K. Magara, K. Nakamura, H. Ohashi, K. Tokuda, T. Takami, H. Ogasawara, Y. Enta, Y. Suzuki, S. Ando, H. Nakazawa
Japanese Journal of Applied Physics 55 065502-1 - 065502-6 2016.6
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Growth of epitaxial SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"
Syunki Narita, Kazuki Meguro, Hideki Nakazawa
115 11 - 14 2015.8
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Effects of substrate bias on properties of nitrogen-doped DLC films prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"
M. Tsuchiya, K. Murakami, T. Sato, T. Takami, Y. Enta, Hideki Nakazawa
115 7 - 10 2015.8
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Preparation and characterization of SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"
Kazuki Meguro, Syunki Narita, Hideki Nakazawa
115 1 - 5 2015.8
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Relaxation of Cs atomic polarization at surface coatings characterized by X-ray photoelectron spectroscopy"jointly worked"
K. Kushida, T. Niwano, T. Morita, T. Shimizu, K. Meguro, H. Nakazawa, A. Hatayama
Japanese Journal of Applied Physics 54 066401-1 - 066401-5 2015.6
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Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane"jointly worked"
H. Nakazawa, D. Suzuki, T. Narita, K. Meguro, M. Tsuchiya
Journal of Crystal Growth 418 52 - 56 2015.5
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Deposition of silicon-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition using an intermittent supply of organosilane"jointly worked"
H. Nakazawa, R. Kmata, S. Okuno
Dimoand and Related Materials 51 7 - 13 2015.1