Papers - NAKAZAWA HIDEKI
-
Effects of source gases on the properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition"jointly worked"
H. Nakazawa, K. Magara, T. Takami, H. Ogasawara, Y. Enta, Y. Suzuki
Thin Solid Films 636 177 - 182 2017.8
-
Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates”jointly worked"
S. Narita, K. Meguro, T. Takami, Y. Enta, H. Nakazawa
Journal of Crystal Growth 260 27 - 36 2017.2
-
Tribological properties and thermal stability of hydrogenated, silicon/nitrogen-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition”jointly worked"
H. Nakazawa, S. Okuno, K. Magara, K. Nakamura, S. Miura, Y. Enta
Japanese Journal of Applied Physics 55 125501-1 - 125501-9 2016.12
-
Structural and electrical properties and current-voltage characterristics of nitrogen-doped diamond-like carbon films on Si substrates by plasma-enhanced chemical vapor deposition”jointly worked"
M. Tsuchiya, K. Murakami, K. Magara, K. Nakamura, H. Ohashi, K. Tokuda, T. Takami, H. Ogasawara, Y. Enta, Y. Suzuki, S. Ando, H. Nakazawa
Japanese Journal of Applied Physics 55 065502-1 - 065502-6 2016.6
-
Growth of epitaxial SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"
Syunki Narita, Kazuki Meguro, Hideki Nakazawa
115 11 - 14 2015.8
-
Effects of substrate bias on properties of nitrogen-doped DLC films prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"
M. Tsuchiya, K. Murakami, T. Sato, T. Takami, Y. Enta, Hideki Nakazawa
115 7 - 10 2015.8
-
Preparation and characterization of SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"
Kazuki Meguro, Syunki Narita, Hideki Nakazawa
115 1 - 5 2015.8
-
Relaxation of Cs atomic polarization at surface coatings characterized by X-ray photoelectron spectroscopy"jointly worked"
K. Kushida, T. Niwano, T. Morita, T. Shimizu, K. Meguro, H. Nakazawa, A. Hatayama
Japanese Journal of Applied Physics 54 066401-1 - 066401-5 2015.6
-
Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane"jointly worked"
H. Nakazawa, D. Suzuki, T. Narita, K. Meguro, M. Tsuchiya
Journal of Crystal Growth 418 52 - 56 2015.5
-
Effects of frequency of pulsed substrate bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition"jointly worked"
H. Nakazawa, R. Kmata, S. Miura, S. Okuno
Thin Solid Films 574 93 - 98 2015.1
-
Deposition of silicon-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition using an intermittent supply of organosilane"jointly worked"
H. Nakazawa, R. Kmata, S. Okuno
Dimoand and Related Materials 51 7 - 13 2015.1
-
SiC heteroepitaxial growth on an AlN layer formed on off-axis Si(001) substrates "jointly worked"
Kazuki Meguro, Tsugutada Narita, Toshihiro Uemura, Hideki Nakazawa
114 7 - 12 2014.9
-
Characterization of nitrogen-doped DLC film prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"
Masato Tsuchiya, Kohei Magara, Kengo Tokuda, Hideki Nakazawa
114 1 - 5 2014.9
-
Formation of an interfacial buffer layer for 3C-SiC heteroepitaxy on AlN/Si substrates "jointly worked"
K. Meguro, T. Narita, K. Noto, H. Nakazawa
Materials Science Forum 778-780 251 - 254 2014.2
-
Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum "jointly worked"
Y. Enta, T. Nagai, T. Yoshida, N. Ujiie, H. Nakazawa
Journal of Applied Physics 114 114104-1 - 114104-4 2013.9
-
Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition "jointly worked"
H. Nakazawa, R. Kmata, S. Miura, S. Okuno
Thin Solid Films 539 134 - 138 2013.7
-
Surface enhanced infrared absorption spectra on pulsed laser deposited silver island films "jointly worked"
H. Nakashima, Y. Sasaki, R. Osozawa, Y. Kon, H. Nakazawa, Y. Suzuki
Thin Solid Films 536 166 - 171 2013.6
-
Effects of pulse bias on structure and properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition（共著）
H. Nakazawa, S. Miura, R. Kamata, S. Okuno, M. Suemitsu, T. Abe
Applied Surface Science 264 625 - 632 2013.1
-
Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi（共著）
K. Yasui, Y. Anezaki, K. Sato, A. Kato, T. Kato, M. Suemitsu, Y. Narita, H. Nakazawa
ECS Transactions 50 171 - 177 2012.12
-
Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE"jointly worked"
112 97 - 100 2012.10