Papers - NAKAZAWA HIDEKI
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Growth of epitaxial SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"
Syunki Narita, Kazuki Meguro, Hideki Nakazawa
115 11 - 14 2015.8
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Effects of substrate bias on properties of nitrogen-doped DLC films prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"
M. Tsuchiya, K. Murakami, T. Sato, T. Takami, Y. Enta, Hideki Nakazawa
115 7 - 10 2015.8
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Preparation and characterization of SiC thin films on AlN/Si(110) substrates by pulsed laser deposition "jointly worked"
Kazuki Meguro, Syunki Narita, Hideki Nakazawa
115 1 - 5 2015.8
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Relaxation of Cs atomic polarization at surface coatings characterized by X-ray photoelectron spectroscopy"jointly worked"
K. Kushida, T. Niwano, T. Morita, T. Shimizu, K. Meguro, H. Nakazawa, A. Hatayama
Japanese Journal of Applied Physics 54 066401-1 - 066401-5 2015.6
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Growth of silicon carbide on Si(100) substrate with an intermediate aluminum nitride layer by ultralow-pressure chemical vapor deposition using monomethylsilane"jointly worked"
H. Nakazawa, D. Suzuki, T. Narita, K. Meguro, M. Tsuchiya
Journal of Crystal Growth 418 52 - 56 2015.5
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Effects of frequency of pulsed substrate bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition"jointly worked"
H. Nakazawa, R. Kmata, S. Miura, S. Okuno
Thin Solid Films 574 93 - 98 2015.1
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Deposition of silicon-doped diamond-like carbon films by plasma-enhanced chemical vapor deposition using an intermittent supply of organosilane"jointly worked"
H. Nakazawa, R. Kmata, S. Okuno
Dimoand and Related Materials 51 7 - 13 2015.1
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SiC heteroepitaxial growth on an AlN layer formed on off-axis Si(001) substrates "jointly worked"
Kazuki Meguro, Tsugutada Narita, Toshihiro Uemura, Hideki Nakazawa
114 7 - 12 2014.9
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Characterization of nitrogen-doped DLC film prepared by radio frequency plasma-enhanced chemical vapor deposition "jointly worked"
Masato Tsuchiya, Kohei Magara, Kengo Tokuda, Hideki Nakazawa
114 1 - 5 2014.9
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Formation of an interfacial buffer layer for 3C-SiC heteroepitaxy on AlN/Si substrates "jointly worked"
K. Meguro, T. Narita, K. Noto, H. Nakazawa
Materials Science Forum 778-780 251 - 254 2014.2
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Decomposition kinetics of silicon oxide layers on silicon substrates during annealing in vacuum "jointly worked"
Y. Enta, T. Nagai, T. Yoshida, N. Ujiie, H. Nakazawa
Journal of Applied Physics 114 114104-1 - 114104-4 2013.9
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Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition "jointly worked"
H. Nakazawa, R. Kmata, S. Miura, S. Okuno
Thin Solid Films 539 134 - 138 2013.7
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Surface enhanced infrared absorption spectra on pulsed laser deposited silver island films "jointly worked"
H. Nakashima, Y. Sasaki, R. Osozawa, Y. Kon, H. Nakazawa, Y. Suzuki
Thin Solid Films 536 166 - 171 2013.6
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Effects of pulse bias on structure and properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition（共著）
H. Nakazawa, S. Miura, R. Kamata, S. Okuno, M. Suemitsu, T. Abe
Applied Surface Science 264 625 - 632 2013.1
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Formation of Ge Nanodots Capped with SiC Layer by Gas-Source MBE Using MMGe and MMSi（共著）
K. Yasui, Y. Anezaki, K. Sato, A. Kato, T. Kato, M. Suemitsu, Y. Narita, H. Nakazawa
ECS Transactions 50 171 - 177 2012.12
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Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE"jointly worked"
112 97 - 100 2012.10
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Formation of AlN layers on Si substrates and growth of 3C-SiC on AlN/Si substrates "jointly worked"
112 39 - 44 2012.10
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Heteroepitaxial growth of 3C-SiC on an AlN intermediate layer on Si(100) substrate "jointly worked"
112 5 - 10 2012.8
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Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics"jointly worked"
112 11 - 15 2012.8
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Fabrication of a SiC/Ge-Nanodots Stacked Structure Using Organometallic Compounds "jointly worked"
Yutaka Anezaki, Takashi Otani, Haruki Goto, Takahiro Kato, Ariyuki Kato, Maki Suemitsu, Yuzuru Narita, Hideki Nakazawa, Kanji Yasui
Journal of The Surface Science Society of Japan 33 376 - 381 2012.7