Papers - NAKAZAWA HIDEKI
-
Gas-Source MBE of SiC/Si using monomethylsilane"jointly worked"
H. Nakazawa, M. Suemitsu, S. Asami
Thin Solid Films 369 269 - 272 2000.7
-
Formation of high quality SiC on Si(100) at 900ºC using monomethylsilane gas-source MBE
H. Nakazawa, M. Suemitsu
Materials Science Forum 338-342 269 - 272 2000
-
Si系ガスソースMBEに関する研究
中澤日出樹
1999.3
-
Higher-order desorption kinetics of hydrogen from silane/, disilane/, and D/Si(100)
H. Nakazawa, M. Suemitsu, S. Asami
Applied Surface Science 130-132 298 - 303 1998.6
-
Effects of surface phosphorus on the kinetics of hydrogen desorption from silane adsorbed Si(100) surface at room temperatures
M. Suemitsu, Y. Tsukidate, H. Nakazawa, Y. Enta
Journal of Vacuum Sicence and Technology A 16 1772 - 1774 1998.5
-
Effect of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
H. Nakazawa, M. Suemitsu, N. Miyamoto
Japanese Journal of Applied Physics Part2 36 L703 - L704 1997.6
-
Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
M. Suemitsu, H. Nakazawa,T. Morita, N. Miyamoto
Japanese Journal of Applied Physics Part2 35 L625 - L628 1997.5
-
A model for the temperature-dependent adsorption kinetics of SiH4 on Si(100)
M. Suemitsu, K.J. Kim, H. Nakazawa, N. Miyamoto
Applied Surface Science 107 81 - 84 1996.11
-
H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE
H. Nakazawa, M. Suemitsu, N. Miyamoto
Surface Science 357-358 555 - 559 1996.6
-
SiガスソースMBEにおける水素吸着脱離過程に関する研究
中澤日出樹
1996.3
-
Temperature-programmed-desorption study of the process of atomic deuterium adsorption onto Si(100)2x1
M. Suemitsu, H. Nakazawa, N. Miyamoto
Applied Surface Science 82-83 449 - 453 1994.12