Papers - NAKAZAWA HIDEKI
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有機シランを用いたプラズマCVD法によるダイヤモンドライクカーボン薄膜の膜特性評価（共著）
三浦創史,中澤日出樹,西崎圭太,末光眞希,安井寛治,伊藤 隆,遠藤哲郎,成田 克
電子情報通信学会技術報告 CPM109 13 - 18 2009.8
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Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition （共著）
Y. Komae, K. Yasui, M. Suemitsu, T. Endoh, T. Ito, H. Nakazawa, Y. Narita, M. Takata, T. Akahane
Japanese Journal of Applied Physics 48 076509-1 - 076509-5 2009.7
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Atomic hydrogen etching of silicon-incorporated diamond- like carbon films prepared by pulsed laser deposition（共著）
H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita
Diamond and Related Materials 18 831 - 834 2009.6
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The growth of GaN films by alternate source gas supply hot-mesh CVD method （共著）
Y. Komae, T. Saitou, M. Suemitsu, T. Ito, T. Endoh, H. Nakazawa, Y. Narita, M. Takata, T. Akahane, K. Yasui
Thin Solid Films 517 3528 - 3531 2009.4
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Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate（共著）
Y. Miyamoto, H. Handa, E. Saito, A. Konno, Y. Narita, M. Suemitsu, H. Fukidome, T. Ito, K. Yasui, H. Nakazawa, T. Endoh
e-Journal of Surface Science and Nanotechnology 7 107 - 109 2009.2
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Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source（共著）
H. Nakazawa, Y. Asai, T. Kinoshita, M. Suemitsu, T. Abe, K. Yasui, T. Itoh, T. Endoh, Y. Narita, A. Konno, Y. Enta, M. Mashita
Japanese Journal of Applied Physics 47 8491 - 8497 2008.11
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パルスモードホットメッシュCVD法による窒化物半導体のエピタキシャル成長（共著）
小前泰彰, 齋藤 健, 末光眞希, 伊藤 隆, 遠藤哲郎, 中澤日出樹, 成田 克, 高田雅介, 安井寛治, 赤羽正志
電子情報通信学会技術報告 108 7 - 12 2008.10
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“Temperature oscillation” as a real-time monitoring of the growth of 3C–SiC on Si substrate（共著）
E. Saito, A. Konno, T. Ito, K. Yasui, H. Nakazawa, T. Endoh, Y. Narita, M. Suemitsu
Applied Surface Science 254 6235 - 6237 2008.7
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Growth of GaN films by hot-mesh chemical vapor deposition using ruthenium coated tungsten mesh （共著）
Y. Fukada, K. Yasui, Y. Kuroki, M. Suemitsu, T. Itoh, T. Endoh, H. Nakazawa, Y. Narita, M. Takata, T. Akahane
Japanese Journal of Applied Physics 47 573 - 576 2008.1
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Effects of substrate bias voltage on structural, mechanical and tribological properties of diamond-like carbon films prepared plasma-enhanced chemical vapor deposition using methane and argon gases（共著）
H. Nakazawa, S. Kato, Y. Asai, M. Mashita
Japanese Journal of Applied Physics 47 231 - 236 2008.1
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Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD （共著）
K. Tamura, Y. Kuroki, K. Yasui, M. Suemitsu, T. Itoh, T. Endoh, H. Nakazawa, Y. Narita, M. Takata, T. Akahane
Thin Solid Films 516 659 - 662 2008.1
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Comparison of film properties between hydrogenated and unhydrogenated diamond-like carbon films prepared by radio-frequency magnetron sputtering "jointly worked"
H. Nakazawa, M. Kudo, M. Mashita
Japanese Journal of Applied Physics 46 7816 - 7823 2007.12
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ホットメッシュCVD法によるGaN成長-ルテニウムコーティッドタングステンメッシュの効果- （共著）
深田祐介，安部和貴，黒木雄一郎，末光眞希，伊藤 隆，成田 克，遠藤哲郎，中澤日出樹，高田雅介，安井寛治，赤羽正志
信学技報 2007.11
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Structural changes of diamond-like carbon films due to atomic hydrogen exposure during annealing "jointly worked"
H. Nakazawa, T. Kawabata, M. Kudo, M. Mashita
Applied Surface Science 253 4188 - 4196 2007.2
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Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane "jointly worked"
Y. Narita, A. Konno, H. Nakazawa, T. Itoh, K. Yasui, T. Endoh, M. Suemitsu
Japanese Journal of Applied Physics 46 L40 - L42 2007.1
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Low-temperature heteroepitaxial growth of 3C-SiC(111) on Si(110) substrate using monomethylsilane "jointly worked"
A. Konno, Y. Narita, T. Itoh,K. Yasui, H. Nakazawa, T. Endoh, M. Suemitsu
ECS Transactions 3 449 - 455 2006.11
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Effects of hydrogen on film properties of diamond-like carbon films prepared by reactive radio-frequency magnetron sputtering using hydrogen gas "jointly worked"
T. Mikami, H. Nakazawa,M. Kudo, M. Mashita
Thin Solid Films 488 87 - 92 2005.9
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Thermal effects on structural properties of diamond-like carbon films prepared by pulsed laser deposition "jointly worked"
H. Nakazawa, Y. Yamagata, M. Suemitsu, M. Mashita
Thin Solid Films 467 98 - 103 2004.11
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Adsorption kinetics of dimethylsilane at Si(001)
K. Senthil, H. Nakazawa, M. Suemitsu
Applied Surface Science 224 183 - 187 2004.3
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Adsorption and desorption kinetics of organosilanes at Si(001) surfaces "jointly worked"
K. Senthil, H. Nakazawa, M. Suemitsu
Japanese Journal of Applied Physics 42 6804 - 6808 2003.11