Papers - ENTA YOSHIHARU
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Void and Nanostructure Formations during Thermal Decomposition of 20-nm-Thick Silicon Oxide Layer on Si(100)（共著）
Yoshiharu Enta, Kano Ogawa, Takayuki Nagai
Japanese Journal of Applied Physics 52 031303-1 - 031303-4 2013.3
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Precise control of epitaxy of graphene by microfabricating SiC substrate（共著）
H. Fukidome, Y. Kawai, Th. Seyller, M. Kotsugi, H. Handa, T. Ohkouchi, H. Miyashita, T. Ide, Y. Enta, T. Kinoshita, M. Suemitsu
Applied Physics Letters 101 041605 2012.7
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Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates（共著）
Takayuki Ide, Yusuke Kawai1, Hiroyuki Handa, Hirokazu Fukidome, Masato Kotsugi, Takuo Ohkochi, Yoshiharu Enta, Toyohiko Kinoshita, Akitaka Yoshigoe, Yuden Teraoka, and Maki Suemitsu
Japanese Journal of Applied Physics 51 06FD02 2012.6
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Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition（共著)
H. Nakazawa, S. Miura, R. Kamata, S. Okuno, Y. Enta, M. Suemitsu, T Abe
Japanese Journal of Applied Physics 51 015603 2012.1
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Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
Hideki Nakazawa, Soushi Miura, Ryosuke Kamata, Saori Okuno, Yoshiharu Enta, Maki Suemitsu, Toshimi Abe
JAPANESE JOURNAL OF APPLIED PHYSICS 51 ( 1 ) 2012.1
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Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si（共著）
Hirokazu Fukidome, Shunsuke Abe, Ryota Takahashi, Kei Imaizumi, Syuya Inomata, Hiroyuki Handa, Eiji Saito, Yoshiharu Enta, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita, Shun Ito and Maki Suemitsu
Applied Physics Express 4 115104 2011.11
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Initial thermal oxidation of Si(100) investigated by Si 2p core-level photoemission（共著）
Yoshiharu ENTA, Hideki NAKAZAWA, Hiroo KATO, Yasuo SAKISAKA
Photon Factory Activity Report 2010 28B 57 - 57 2011.11
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Control of Epitaxy of Graphene by Crystallographic Orientation of Si Substrate toward Device Applications（共著）
Hirokazu Fukidome, Ryota Takahashi, Shunsuke Abe, Kei Imaizumi, Hiroyuki Handa, Hyun-Chul Kang, Hiromi Karasawa, Tetsuya Suemitsu, Taiichi Otsuji, Yoshiharu Enta, Maki Suemitsu, Akitaka Yoshigoe, Yuden Teraoka, Masato Kotsugi, Takuo Ohkouchi, Toyohiko Kinoshita
Journal of Materials Chemistry 21 17242 - 17248 2011.10
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シリコン酸化膜の不均一な熱分解（共著）
遠田義晴，小川可乃，永井孝幸
電子情報通信学会技術研究報告書 111 ( 176 ) 61 - 64 2011.8
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Oxygen-Induced Reduction of the Graphitization Temperature of SiC Surface（共著）
Kei Imaizumi, Hiroyuki Hanada, Ryota Takahashi, Eiji Saito, Hirokazu Fukidome, Yoshiharu Enta, Yuden Teraoka, Akitaka Yoshigoe, Maki Suemitsu
Japanese Journal of Applied Physics 50 070105 2011.7
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Effect of Interfacial Strain in Wet Oxidation Kinetics on Si(100)（共著）
Bongjin Simon Mun, Massimiliano Rossi, Yoshiharu Enta
Journal of Korean Physical Society 58 920 - 923 2011.4
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Thermal desorption of silicon oxide layer on Si(100) investigated by Si 2p core-level photoemission（共著）
Yoshiharu ENTA, Hideki NAKAZAWA, Sumiya SATO, Hiroo KATO, Yasuo SAKISAKA
Photon Factory Activity Report 2009 27B 67 - 67 2010.11
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Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure（共著）
H. Nakazawa, R. Osozawa, Y. Enta, M. Suemitsu
Diamond and Related Materials 19 1387 - 1392 2010.11
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Changes of chemical bonding of diamond-like carbon films by atomic-hydrogen exposure（共著）
Hideki NAKAZAWA, Ryoichi OSAZAWA
Photon Factory Activity Report 2009 27B 66 - 66 2010.11
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Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure
H. Nakazawa, R. Osozawa, Y. Enta, M. Suemitsu
DIAMOND AND RELATED MATERIALS 19 ( 11 ) 1387 - 1392 2010.11
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Silicon thermal oxidation and its thermal desorption investigated by Si 2p core-level photoemission（共著）
Y. Enta, H. Nakazawa, S. Sato, H. Kato, Y. Sakisaka
Journal of Physics: Conference Series 235 012008 2010.6
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Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition (共著)
Hideki NAKAZAWA, Takeshi KINOSHITA, Yuhta KAIMORI, Yuhki ASAI, Maki SUEMITSU1, Toshimi ABE, Kanji YASUI, Tetsuo ENDOH, Takashi ITOH, Yuzuru NARITA, Yoshiharu ENTA, Masao MASHITA
Japanese Journal of Applied Physics 48 116002 2009.11
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Angle-Resolved Photoemission from the Valence-Bands of Ce(111)（共著）
Osamu MORIMOTO, Hiroo KATO, Yoshiharu ENTA, Yasuo SAKISAKA
Photon Factory Activity Report 2008 26B 79 - 79 2009.11
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Atomic hydrogen etching of silicon-incorporated diamond-like carbon films prepared by pulsed laser deposition
H. Nakazawa, H. Sugita, Y. Enta, M. Suemitsu, K. Yasui, T. Itoh, T. Endoh, Y. Narita, M. Mashita
DIAMOND AND RELATED MATERIALS 18 ( 5-8 ) 831 - 834 2009.5
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Photoemission from the valence bands of Ce(111) on W(110) (共著)
O. Morimoto, H. Kato, Y. Enta, Y. Sakisaka
Surface Science 603 ( 13 ) 2145 - 2151 2009.4